Related papers: Mapping the potential within a nanoscale undoped G…
We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs/AlGaAs heterostructure, through which the conductance is quantized. The…
The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped GaAs crystals at 77K on the concentration of background acceptor impurities and the level of excitation in the range from…
Second-order nonlinear optical interactions, including second harmonic generation (SHG) and sum-frequency generation (SFG), can reveal a wealth of information about chemical, electronic, and vibrational dynamics at the nanoscale. Here, we…
We perform experiments in the Large Plasma Device (LAPD) at the University of California, Los Angeles, studying how different end-electrode biasing schemes modify the radial potential profile in the machine. We impose biasing profiles of…
We study the electronic properties of InAs/EuS/Al heterostructures as explored in a recent experiment [S. Vaitiekenas \emph{et al.}, Nat. Phys. (2020)], combining both spectroscopic results and microscopic device simulations. In particular,…
We study the magneto-transport and magneto-electroluminescence properties of purely n-doped GaAs/Al$_{0.6}$Ga$_{0.4}$As resonant tunneling diodes with an In$_{0.15}$Ga$_{0.85}$As quantum well and emitter prewell. Before the resonant current…
The allure of all carbon electronics stems from the spread in physical properties, across all its allotropes. The scheme also harbours unique challenges, like tunability of band-gap, variability of doping and defect control. Here, we…
Confinement of the electron gas along one of the spatial directions opens an avenue for studying fundamentals of quantum transport along the side of numerous practical electronic applications, with high-electron-mobility transistors being a…
Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass…
Electron paramagnetic resonance (EPR) can provide unique insight into the chemical structure and magnetic properties of dopants in oxide and semiconducting materials that are of interest for applications in electronics, catalysis, and…
Photoreflectance is used for the characterisation of semiconductor samples, usually by sweeping the monochromatized probe beam within the energy range comprised between the highest value set by the pump beam and the lowest absorption…
The scanning electron microscopy (SEM) is probably one the most fascinating examination approach that has been used since more than two decades to detailed inspection of micro scale objects. Most of the scanning electron microscopes could…
The spatially-resolved laser-based high resolution angle resolved photoemission spectroscopy (ARPES) measurements have been performed on the optimally-doped HgBa$_2$Ca$_2$Cu$_3$O$_{8+\delta}$ (Hg1223) superconductor with a $T_c$ at 133 K.…
We show that in-plane-magnetic-field assisted spectroscopy allows extraction of the in-plane orientation and full 3D shape of the quantum mechanical orbitals of a single electron GaAs lateral quantum dot with sub-nm precision. The method is…
Nanostructures fabricated from narrow-gap semiconductors with strong spin-orbit interaction (SOI), such as InAs, can be used to filter momentum modes of electrons and offer the possibility to create and detect spin-polarized currents…
We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) $Ga_{0.98}Mn_{0.02}P$ and compared it to that of an undoped $GaP$ reference sample, using hard X-ray photoelectron spectroscopy (HXPS) and hard X-ray…
In this paper we present a method for simulating the response of microstrip detectors to minimum ionizing particles, making use of a program for field calculation, a program for carrier drift and SPICE for circuit response. A knowledge of…
Quasi-static transport measurements are employed to characterize a few electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide…
Interactions between atomic and molecular objects are to a large extent defined by the nanoscale electrostatic potentials which these objects produce. We introduce a scanning probe technique that enables three-dimensional imaging of local…
Lateral inhomogeneities in the formation of 2-dimensional electron gases (2DEG) directly influence their electronic properties. Understanding their origin is an important factor for fundamental interpretations, as well as high quality…