Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system.
@article{arxiv.1911.00342,
title = {Microscopic model of stacking-fault potential and exciton wave function in GaAs},
author = {Mikhail V. Durnev and Mikhail M. Glazov and Xiayu Linpeng and Maria L. K. Viitaniemi and Bethany Matthews and Steven R. Spurgeon and P. V. Sushko and Andreas D. Wieck and Arne Ludwig and Kai-Mei C. Fu},
journal= {arXiv preprint arXiv:1911.00342},
year = {2020}
}