We investigate the magneto-optical properties of excitons bound to single stacking faults in high-purity GaAs. We find that the two-dimensional stacking fault potential binds an exciton composed of an electron and a heavy-hole, and confirm a vanishing in-plane hole g-factor, consistent with the atomic-scale symmetry of the system. The unprecedented homogeneity of the stacking-fault potential leads to ultra-narrow photoluminescence emission lines (with full-width at half maximum ≲80μeV) and reveals a large magnetic non-reciprocity effect that originates from the magneto-Stark effect for mobile excitons. These measurements unambiguously determine the direction and magnitude of the giant electric dipole moment (≳e⋅10nm) of the stacking-fault exciton, making stacking faults a promising new platform to study interacting excitonic gases.
@article{arxiv.1601.03991,
title = {Giant permanent dipole moment of 2D excitons bound to a single stacking fault},
author = {Todd Karin and Xiayu Linpeng and M. M. Glazov and M. V. Durnev and E. L. Ivchenko and Sarah Harvey and Ashish K. Rai and Arne Ludwig and Andreas D. Wieck and Kai-Mei C. Fu},
journal= {arXiv preprint arXiv:1601.03991},
year = {2016}
}