Related papers: Mapping the potential within a nanoscale undoped G…
Ferromagnetic semiconductors promise the extension of metal-based spintronics into a material system that combines widely tunable electronic, optical, and magnetic properties. Here, we take steps towards realizing that promise by achieving…
We demonstrate that including the second viscosity of an electron gas in the hydrodynamic model allows for highly accurate modeling of the optical response of heavily doped semiconductors. In our setup, which improves resonance visibility…
A new material characterization technique is emerging for the transmission electron microscope (TEM). Using electron energy-loss spectroscopy, real space mappings of the underlying electronic transitions in the sample, so called orbital…
We have measured the optical constants of GaMnAs from 0.62 eV to 6 eV, using spectroscopic ellipsometry. The second derivatives of the dielectric function are examined through a critical point analysis. The E1 critical point shifts to…
Scanning electron microscopy (SEM) is the premier method for characterizing the nanoscale surface pores in ultrafiltration (UF) membranes and the support layers of reverse osmosis (RO) membranes. Based on SEM, the conventional understanding…
Aberration-corrected optics have made electron microscopy at atomic-resolution a widespread and often essential tool for nanocharacterization. Image resolution is dominated by beam energy and the numerical aperture of the lens ({\alpha}),…
Optical second-harmonic generation is demonstrated to be a sensitive probe of the buried interface between the lattice matched semiconductors gallium phosphide and silicon with (001) orientation. Rotational anisotropy measurements of SHG…
The correct treatment of d electrons is of prime importance in order to predict the electronic properties of the prototype chalcopyrite semiconductors. The effect of d states is linked with the anion displacement parameter u, which in turn…
Electronic devices are extremely sensitive to defects in their constituent semiconductors, but locating electronic point defects in bulk semiconductors has previously been impossible. Here we apply scanning transmission electron microscopy…
In analogy with optical near-field scanning methods, we use tapered dielectric waveguides as probes for a millimeter wave vector network analyzer. By scanning thin samples between two such probes we are able to map the spatially varying…
The screening problem for the Coulomb potential of a charge located in a two-dimensional (2D) system has an intriguing solution with a power law distance screening factor due to out-of-plane electrical fields. This is crucially different…
In this paper, we consider a scenario where a source node wishes to broadcast two confidential messages for two respective receivers via a Gaussian MIMO broadcast channel. A wire-tapper also receives the transmitted signal via another MIMO…
We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric…
The compound semiconductor gallium arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion…
Cyclotron resonance has been measured in far-infrared transmission of GaAs/Al$_x$Ga$_{1-x}$As heterostructures with an etched hexagonal lateral superlattice. Non-linear dependence of the resonance position on magnetic field was observed as…
We have used gated GaAs/AlGaAs heterostructures to explore nonlinear transport between spin-resolved Landau level (LL) edge states over a submicron region of two-dimensional electron gas (2DEG). The current I flowing from one edge state to…
Free electron like image potential states are observed in scanning tunneling spectroscopy on graphene quantum dots on Ir(111) acting as potential wells. The spectrum strongly depends on the size of the nanostructure as well as on the…
Transverse electron focusing in two-dimensional electron gases (2DEGs) with strong spin-orbit coupling is revisited. The transverse focusing is related to the transmission between two contacts at the edge of a 2DEG when a perpendicular…
High-resolution mapping of electronic properties at oxide heterointerfaces remains challenging due to probe delocalization and overlapping signals. In this work, we employ monochromated, probe-corrected scanning transmission electron…
The exceptional electronic, optical and chemical properties of two-dimensional materials strongly depend on the 3D atomic structure and crystal defects. Using Re-doped MoS2 as a model, here we develop scanning atomic electron tomography…