Related papers: Mapping the potential within a nanoscale undoped G…
The ability to reversibly and site-selectively tune ambipolar doping in a single semiconductor is crucial for reconfigurable electronics beyond silicon, but remains highly challenging. Here, we present a rewritable architecture based on…
Topological superconductivity can be engineered in semiconductors with strong spin-orbit interaction coupled to a superconductor. Experimental advances in this field have often been triggered by the development of new hybrid material…
We theoretically demonstrate negative refraction and sub-wavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors. The metal-like re-sponse of typical semiconductors such as GaAs or GaP makes it…
Galvanic replacement reactions on metal nanoparticles are often used for the preparation of hollow nanostructures with tunable porosity and chemical composition, leading to tailored optical and catalytic properties. However, the precise…
Electron Holographic Tomography was used to obtain 3-dimensional reconstructions of the morphology and electrostatic potential gradient of axial GaInP/InP nanowire tunnel diodes. Crystal growth was carried out in two opposite directions:…
We review magneto-optical and magneto-transport effects in GaAs/GaAlAs heterostructures doped in GaAlAs barriers with donors, providing two-dimensional electron gas in GaAs quantum wells, and additionally doped with smaller amounts of…
The spatial distributions of anti-bonding $\pi^\ast$ and $\sigma^\ast$ states in epitaxial graphene multilayers are mapped using electron energy-loss spectroscopy in a scanning transmission electron microscope. Inelastic channeling…
Here, we investigate the physical mechanisms that may enable squeezing a complex electromagnetic field distribution through a narrow and/or partially obstructed region with little amplitude and phase distortions. Following our recent works,…
Scanning electron microscopy (SEM) is a versatile technique used to image samples at the nanoscale. Conventional imaging by this technique relies on finding the average intensity of the signal generated on a detector by secondary electrons…
The near field scanning optical microscopy (NSOM) is not only a tool for imaging of objects in the sub wavelength limit but also a prominent characteristic tool for understanding the intrinsic properties of the nanostructures. The effect of…
We demonstrate a scheme for optically patterning nuclear spin polarization in semiconductor/ferromagnet heterostructures. A scanning time-resolved Kerr rotation microscope is used to image the nuclear spin polarization that results when…
We consider conductance mapping of systems based on the two-dimensional electron gas with scanning gate microscopy using two and more tips of the atomic force microscope. The paper contains results of numerical simulations for a model tip…
We propose a novel probe technique capable of performing local low-temperature spectroscopy on a 2D electron system (2DES) in a semiconductor heterostructure. Motivated by predicted spatially-structured electron phases, the probe uses a…
The effect of strong magnetic fields parallel to GaAs/AlGaAs interface on the subband structure of a 2D electron layer is ivestigated theoretically. The system with two levels occupied in zero magnetic field is considered and the magnetic…
The discrete and charge-separated nature of matter - electrons and nuclei - results in local electrostatic fields that are ubiquitous in nanoscale structures and are determined by their shape, material, and environment. Such fields are…
The effect of a constant electric field and donor impurity on the energies and oscillator strengths of electron intraband quantum transitions in double-well spherical quantum dot GaAs/Al$_{x}$Ga$_{1-x}$As/GaAs is researched. The problem is…
We investigate the electronic properties of the (110) cross-sectional surface of Si-doped GaAs using first-principles techniques. We focus on doping configurations with an equal concentration of Si impurities in cationic and anionic sites,…
Deep-UV ~ 250 nm (4.96 eV) tilted in-situ co-illumination of the sample under imaging by scanning electron microscope (SEM) is developed at a robust and practical instrument level. Precise mechanical control of the lateral position and tilt…
A Computationally Assisted Spectroscopic Technique to measure secondary electron emission coefficients ($\gamma$-CAST) in capacitively-coupled radio-frequency plasmas is proposed. This non-intrusive, sensitive diagnostic is based on a…
We report our detailed investigation of high-resolution imaging using secondary electrons (SE) with a subnanometer probe in an aberration-corrected transmission electron microscope, Hitachi HD2700C. This instrument also allows us to acquire…