Related papers: Stabilization of amorphous GaN by oxygen
Thin films of iron and permalloy Ni80Fe20 were prepared using an Ar+N2 mixture with magnetron sputtering technique at ambient temperature. The nitrogen partial pressure, during sputtering process was varied in the range of 0 to 100%,…
We present direct evidence of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B. Scanning electron microscopy together with X-ray diffraction measurements in…
In this study, the structural and magnetic properties of group-IV-doped monolayer GaN were systematically investigated by first-principles calculations. Among all the group-IV dopants, only Ge and Sn atoms prefer to substitute the Ga atom…
We review the literature and present new experimental data to determine the amount of carbon likely to be locked in form of solid hydrogenated amorphous carbon (HAC) grains. We conclude on the basis of a thorough analysis of the intrinsic…
In this work, we investigate the correlation between morphology, composition, and the mechanical properties of metallic amorphous tungsten-oxygen and amorphous tungsten-oxide films deposited by Pulsed Laser Deposition. This correlation is…
(a+c) dislocations in hexagonal materials are typically observed to be dissociated into partial dislocations. Edge (a+c) dislocations are introduced into (0001) nitride semiconductor layers by the process of plastic relaxation. As there is…
The stability of graphene nanoribbons in the presence of typical atmospheric molecules is systematically investigated by means of density functional theory. We calculate the edge formation free energy of five different edge configurations…
A mild annealing procedure was recently proposed for the scalable enhancement of graphene oxide (GO) properties with the oxygen content preserved, which was demonstrated to be attributed to the thermally driven phase separation. In this…
We present a study on the design, growth and optical characterization of a GaN/AlGaN microcavity for the enhancement of second order non linear effects. The proposed system exploits the high second order nonlinear optical response of GaN…
We propose that changing-look AGN transitions arise from variations in the size of the inner ADAF disk. The AGN accretion disk consists of an outer thin disk and an inner thick ADAF component, whose size is intrinsically unstable and…
We investigate the large-scale structure of amorphous ices and transitions between their different forms by quantifying their large-scale density fluctuations. Specifically, we simulate the isothermal compression of low-density amorphous…
A dense phase of GaAs wires forms in the early stages of strained growth on GaP,assembling from elongated Stranski-Krastanow islands. The electron diffraction during growth is consistent with long, faceted GaAs islands that are…
GaN(0001) surfaces with Ga- and H-adsorbates are fundamental stages for epitaxial growth of semiconductor thin films. We explore stable surface structures with nanometer scale by the density-functional calculations combined with Bayesian…
Oxygen is the most common unintentional impurity found in GaN. We study the interaction between substitutional oxygen (ON) and the gallium vacancy (VGa) to form a point defect complex in GaN. The formation energy of the gallium vacancy is…
We present a study for a sample of galaxies with active nuclei to characterize the main type of PAH molecules present in these objects and the local physical conditions of their irradiating sources, as well as the characteristics of the…
The structural nature of high-density amorphous ice (HDA), which forms through low-temperature pressure-induced amorphization of the 'ordinary' ice I, is heavily debated. Clarifying this question is not only important for understanding the…
The detection of dusty winds dominating the infrared emission of AGN on parsec scales has revealed the limitations of traditional radiative transfer models based on a toroidal distribution of dusty gas. A new, more complex, dynamical…
When pristine material surfaces are exposed to air, highly reactive broken bonds can promote the formation of surface oxides with structures and properties differing greatly from bulk. Determination of the oxide structure, however, is often…
We address the fabrication of nano-architectures by impacting thin layers of amorphous Ge deposited on SiO$_{2}$ with a Ga$^{+}$ ion beam and investigate the structural and optical properties of the resulting patterns. By adjusting beam…
Hexagonal to cubic phase transformation is studied in focused ion beam assisted Ga+-implanted GaN nanowires. Optical photoluminescence and cathodoluminescence studies along with high-resolution transmission electron microscopic structural…