Related papers: Stabilization of amorphous GaN by oxygen
Identifying applicable anode materials is a significant task for Li- and Na-ion battery (LIB and NIB) technologies. We propose the GaN monolayer (2D GaN) can be a good anode candidate. The GaN monolayer manifests stable Li/Na adsorption and…
In this study we report on a novel two-step epitaxial growth technique that enables a significant improvement of the crystal quality of nitrogen-polar GaN. The starting material is grown on 4{\deg} vicinal sapphire substrates by metal…
Atomic layer deposition (ALD) is an essential tool in semiconductor device fabrication that allows the growth of ultrathin and conformal films to precisely form heterostructures and tune interface properties. The self-limiting nature of the…
Grazing incidence anomalous x-ray scattering was used to monitor in situ the molecular beam epitaxy growth of GaN/AlN quantum dots (QDs). The strain state was studied by means of grazing incidence Multi-wavelength Anomalous Di raction (MAD)…
We adopt a Bayesian X-ray spectral approach to investigate the accretion properties of unobscured ($20<\log(N_{\rm H}/{\rm cm}^{-2}<22$) and obscured ($22< \log(N_{\rm H}/{\rm cm}^{-2}<24$) active galactic nuclei (AGN) to shed light on the…
The development of uniform GaN micro-pyramids and platelets via selective area growth is a critical step toward advancing III-nitride device technologies, particularly for micro-light-emitting diode applications. This work investigates the…
Polymorphism contributes to the diversity of nature, so that even materials having identical chemical compositions exhibit variations in properties because of different lattice symmetries. Thus, if stacked together into multilayers,…
We present results of our ongoing study of the morphology and kinematics of the ionised gas in 48 representative nearby elliptical and lenticular galaxies using the SAURON integral-field spectrograph on the 4.2m William Herschel Telescope.…
Selective area growth of GaN nanostructures has been performed on full 2" c-sapphire substrates using Si3N4 mask patterned by nanoimprint lithography (array of 400 nm diameter circular holes). A new process has been developed to improve the…
Results of 2D spectral observations for 4 Sy galaxies with ionization cones are presented. Images in the [OIII] line, velocity fields of the ionized gas, stellar velocity and velocity dispersion fields were obtained at the SAO RAS 6m…
Hybridization of semiconducting and magnetic materials into a single heterostructure is believed to be potentially applicable to the design of novel functional spintronic devices. In the present work we report epitaxial stabilization of…
We study the nucleation of GaN islands grown by plasma-assisted molecular-beam epitaxy on AlN(0001) in a Stranski-Krastanov mode. In particular, we assess the variation of their height and density as a function of GaN coverage. We show that…
The behavior of shear-oscillated amorphous materials is studied using a coarse-grained model. Samples are prepared at different degrees of annealing and then subject to athermal and quasistatic oscillatory deformations at various fixed…
Biaxially textured MgO templates have been successfully fabricated on several amorphous polymer films including Kapton tapes, polyimide, Poly(methyl methacrylate) (PMMA), and photoresist films using ion-beam-assisted-deposition (IBAD). With…
Molecular-like carbon-nitrogen complexes in GaAs are investigated both experimentally and theoretically. Two characteristic high-frequency stretching modes at \num{1973} and \SI{2060}{cm^{-1}}, detected by Fourier transform infrared…
The steady state packing fraction of a tapped granular bed is studied for different grain shapes via a discrete element method. Grains are monosized regular polygons, from triangles to icosagons. Comparisons with disk packings show that the…
Classical molecular-dynamics simulations have been carried out to investigate densification mechanisms in silicon dioxide thin films deposited on an amorphous silica surface, according to a simplified ion-beam assisted deposition (IBAD)…
Quasi-2D bidisperse amorphous systems of steel beads are fluidized by a uniform upflow of air, so that the beads roll on a horizontal plane. The short-time ballistic motion of the beads is stochastic, with non-Gaussian speed distributions…
Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N…
The thermodynamic properties of gases have been understood primarily through phase diagrams of bulk gases. However, observations of gases confined in a nanometer space have posed a challenge to the principles of classical thermodynamics.…