In this study, the structural and magnetic properties of group-IV-doped monolayer GaN were systematically investigated by first-principles calculations. Among all the group-IV dopants, only Ge and Sn atoms prefer to substitute the Ga atom of monolayer GaN and form a buckling structure with a magnetic moment of 1 μB per dopant. The N-rich growth conditions are more desirable for such a substitution process than the Ga-rich grow conditions. With a large diffusion barrier vertical to the monolayer GaN, both Ge and Sn atoms tend to stay on the same side of monolayer GaN with an antiferromagnetic coupling between them. When intrinsic vacancies exist in monolayer GaN, the magnetic moments of group-IV dopants vanish due to the charge transferring from the dopants to Ga or N vacancies. The precondition creation of Ga vacancies, a plentiful supply of Ge or Sn dopants, and the N-rich conditions can be adopted to maintain the magnetic properties of group-IV-doped monolayer GaN. These theoretical results help to promote the applications of 2D GaN-based materials in spintronics.
@article{arxiv.2301.07866,
title = {The unexpected magnetism in 2D group-IV-doped GaN for spintronic applications},
author = {Rui Zhao and Rui Guo and Yanfeng Ge and Yong Liu and Wenhui Wan},
journal= {arXiv preprint arXiv:2301.07866},
year = {2023}
}