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Related papers: Charge and spin distributions in GaMnAs/GaAs Ferro…

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We present results of a numerical analysis of magnon spectra in supercells simulating two-dimensional and bulk random diluted ferromagnets with long-ranged pair exchange interactions. We show that low-energy spectral regions for these…

Materials Science · Physics 2016-12-02 Ilja Turek , Josef Kudrnovsky , Vaclav Drchal

The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion…

We compute the Gilbert damping in (Ga,Mn)As based on the scattering theory of magnetization relaxation. The disorder scattering is included non-perturbatively. In the clean limit, the spin-pumping from the localized d-electrons to the…

Materials Science · Physics 2011-11-03 Kjetil M. D. Hals , Arne Brataas

Magnetoresistance measurements on the magnetic semiconductor (In,Mn)Sb suggest that magnetic scattering in this material is dominated by isolated Mn$^{2+}$ ions located outside the ferromagnetically-ordered regions when the system is below…

Other Condensed Matter · Physics 2009-11-11 M. Csontos , T. Wojtowicz , X. Liu , M. Dobrowolska B. Jankó , J. K. Furdyna , G. Mihály

We report on study of magnetic impurities spin relaxation in diluted magnetic semiconductors above Curie temperature. Systems with a high concentration of magnetic impurities where magnetic correlations take place were studied. The…

Materials Science · Physics 2021-08-27 I. V. Krainov , V. F. Sapega , G. S. Dimitriev , N. S. Averkiev

The collective behavior of spins in a dilute magnetic semiconductor is determined by their mutual interactions and influenced by the underlying crystal structure. Hence, we begin with the atomic quantum-mechanical description of this system…

Materials Science · Physics 2010-10-12 Agnieszka Werpachowska , Tomasz Dietl

The charge dynamics of hydrogen-like centers formed by the implantation of energetic (4 MeV) muons in semi-insulating GaAs have been studied by muon spin resonance in electric fields. The results point to the significant role of deep hole…

Materials Science · Physics 2008-10-16 D. G. Eshchenko , V. G. Storchak , S. P. Cottrell , E. Morenzoni

We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (GaMnAs) in bilayer and trilayer heterostructures. An exchange spring model…

Materials Science · Physics 2015-05-13 M. J. Wilson , M. Zhu , R. C. Myers , D. D. Awschalom , P. Schiffer , N. Samarth

We investigate the electronic density redistribution of rotated bilayer graphene under a perpendicular electric field, showing that the layers are actually coupled even for large angles. This layer-layer coupling is evidenced by the charge…

Mesoscale and Nanoscale Physics · Physics 2012-03-26 E. Suárez Morell , P. Vargas , L. Chico , L. Brey

The rapidly expanding research in Spintronics, the electronics utilizing the electron spin instead of its charge, is driven by the very interesting potential applications. The actual task is to develop principles for the spin manipulations…

Materials Science · Physics 2009-11-10 A. V. Scherbakov , A. V. Akimov , D. R. Yakovlev , W. Ossau , L. Hansen , A. Waag , L. W. Molenkamp

Mn doped semiconductors are extremely interesting systems due to their novel magnetic properties suitable for the spintronics applications. It has been shown recently by both theory and experiment that Mn doped GaN systems have a very high…

Materials Science · Physics 2016-08-31 B. Sanyal , O. Bengone , S. Mirbt

The stability of the nonmodulated martensitic phase, the austenitic Fermi surface and the phonon dispersion relations for ferromagnetic Ni$_2$MnGa are studied using density functional theory. Exchange-correlation effects are considered with…

We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low…

Materials Science · Physics 2009-11-07 S. H. Chun , S. J. Potashnik , K. C. Ku , P. Schiffer , N. Samarth

This study explores the relationship between spin diffusion, spin lifetime, electron density and lateral spatial confinement in two-dimensional electron gases hosted in GaAs quantum wells. Using time-resolved magneto-optical Kerr effect…

Mesoscale and Nanoscale Physics · Physics 2025-01-15 B. W. Grobecker , A. V. Poshakinskiy , S. Anghel , T. Mano , G. Yusa , M. Betz

We report on the fabrication of pseudomorphic wurtzite GaMnN grown on GaN with Mn concentrations up to 10% using molecular beam epitaxy. According to Rutherford backscattering the Mn ions are mainly at the Ga-substitutional positions, and…

Ferromagnetic semiconductors promise the extension of metal-based spintronics into a material system that combines widely tunable electronic, optical, and magnetic properties. Here, we take steps towards realizing that promise by achieving…

Ion implantation of Mn combined with pulsed laser melting is employed to obtain two representative compounds of dilute ferromagnetic semiconductors (DFSs): Ga1-xMnxAs and In1-xMnxAs. In contrast to films deposited by the widely used…

The magnetization distribution, its energetic characterization by the interlayer coupling constants and lattice dynamics of (001)-oriented Fe/Pt multilayers are investigated using density functional theory combined with the direct method to…

Materials Science · Physics 2016-08-14 Paweł T. Jochym , Krzysztof Parlinski , Andrzej M. Oleś

The magnetic moment and magnetization in GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn $\delta$-layer thicknesses near GaInAs-quantum well ($\sim$3 nm) in…

Materials Science · Physics 2015-06-22 T. Charikova , V. Okulov , A. Gubkin , A. Lugovikh , K. Moiseev , V. Nevedomsky , Yu. Kudriavstev , S. Gallardo , M. Lopez

Distribution of aluminum and gallium atoms over the tetrahedral and octahedral sites in the garnet structure was studied in the mixed Lu3Al5-xGaxO12 crystals using the 27Al and 71Ga MAS NMR together with the single crystal 71Ga NMR. The…

Materials Science · Physics 2018-01-09 Yu. Zagorodniy , V. Chlan , H. Štěpánková , Y. Fomichov , J. Pejchal , V. Laguta , M. Nikl