The charge dynamics of hydrogen-like centers formed by the implantation of energetic (4 MeV) muons in semi-insulating GaAs have been studied by muon spin resonance in electric fields. The results point to the significant role of deep hole traps in the compensation mechanism of GaAs. Electric-field-enhanced neutralization of deep electron and hole traps by muon-track-induced hot carriers results to an increase of the non-equilibrium carrier life-times. As a consequence, the muonium (μ++e−) center at the tetrahedral As site can capture the track's holes and therefore behaves like a donor.
@article{arxiv.0810.2692,
title = {The microscopic study of a single hydrogen-like impurity in semi-insulating GaAs},
author = {D. G. Eshchenko and V. G. Storchak and S. P. Cottrell and E. Morenzoni},
journal= {arXiv preprint arXiv:0810.2692},
year = {2008}
}