Magnetization Dissipation in the Ferromagnetic Semiconductor (Ga,Mn)As
Materials Science
2011-11-03 v2 Mesoscale and Nanoscale Physics
Abstract
We compute the Gilbert damping in (Ga,Mn)As based on the scattering theory of magnetization relaxation. The disorder scattering is included non-perturbatively. In the clean limit, the spin-pumping from the localized d-electrons to the itinerant holes dominates the relaxation processes. In the diffusive regime, the breathing Fermi-surface effect is balanced by the effects of interband scattering, which cause the Gilbert damping constant to saturate at around 0.005. In small samples, the system shape induces a large anisotropy in the Gilbert damping.
Cite
@article{arxiv.1105.4148,
title = {Magnetization Dissipation in the Ferromagnetic Semiconductor (Ga,Mn)As},
author = {Kjetil M. D. Hals and Arne Brataas},
journal= {arXiv preprint arXiv:1105.4148},
year = {2011}
}
Comments
Final version accepted by Physical Review B