Related papers: A spin field effect transistor for low leakage cur…
We formulate a theory of current-induced spin torques in inhomogeneous III-V ferromagnetic semiconductors. The carrier spin-3/2 and large spin-orbit interaction, leading to spin non-conservation, introduce significant conceptual differences…
A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivity and drift velocity are modified while keeping constant…
A mesoscopic description of spin-transfer effect is proposed, based on the spin-injection mechanism occurring at the junction with a ferromagnet. The effect of spin-injection is to modify locally, in the ferromagnetic configuration space,…
The spin-orbit coupling systems with a zero magnetic field is studied under the equilibrium situation, {\it i.e.}, without a voltage bias. A persistent spin current is predicted to exist under most circumstances, although the persistent…
We demonstrate the general principle which states that a dissipationless spin current flows between two coupled ferromagnets if their magnetic orders are misaligned. This principle applies regardless the two ferromagnets are metallic or…
We consider a problem of persistent magnetization precession in a single domain ferromagnetic nano particle under the driving by the spin-transfer torque. We find that the adjustment of the electronic distribution function in the particle…
Electron tunneling in ferromagnetic single-electron transistors is considered theoretically in the sequential tunneling regime. A new formalism is developed, which operates in a two-dimensional space of states, instead of one-dimensiona…
Spin-based logic devices could operate at very high speed with very low energy consumption and hold significant promise for quantum information processing and metrology. Here, an in-house developed, experimentally verified, ensemble…
We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used,…
The critical current needed to destabilize the magnetization of a perpendicular ferromagnet via the spin Hall effect is studied. Both the dampinglike and fieldlike torques associated with the spin current generated by the spin Hall effect…
Spin Hall effect plays an essential role in generating spin current from the injected charge current, following the Dyakonov-Perel rule that the directions of charge flow, spin flow and spin polarization are mutually perpendicular to each…
Spin currents in ferromagnets afford diverse functionalities. We evaluate the extrinsic spin Hall effects of magnetic impurity scattering in ferromagnetic metals. We show that spin-dependent scattering can provide a high spin current…
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…
The theoretical description has been proposed for the operation of the spin transistor in the gate-controlled InAs nanowire. The calculated current-voltage characteristics show that the current flowing from the source (spin injector) to the…
The huge spin precession frequency observed in recent experiments with spin-polarized beams of hot electrons shot through magnetized films is interpreted as being caused by Zeeman coupling of the electron spins to the so-called Weiss…
Quantum wires with periodic local Rashba spin-orbit couplings are proposed for a higher performance of spin field-effect transistor. Fano-Rashba quantum interference due to the spin-dependent modulated structure gives rise to a broad energy…
The mechanisms of the magnetization switching of magnetic multilayers driven by a current are studied by including exchange interaction between local moments and spin accumulation of conduction electrons. It is found that this exchange…
Electrical control and detection of spin precession are experimentally demonstrated by using spin-resolved edge states in the integer quantum Hall regime. Spin precession is triggered at a corner of a biased metal gate, where electron…
Single-electron transistor with ferromagnetic outer electrodes and nonmagnetic island is studied theoretically. Nonequilibrium electron spin distribution in the island is caused by tunneling current. The dependencies of the…
Using a three-dimensional focused-ion beam lithography process we have fabricated nanopillar devices which show spin transfer torque switching at zero external magnetic fields. Under a small in-plane external bias field, a field-dependent…