Related papers: A spin field effect transistor for low leakage cur…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…
The spin Hall effect is a phenomenon that an electric field induces a spin Hall current. In this Letter, we examine the inverse effect that, in a ferromagnetic conductor, a charge Hall current is induced by a spin motive force, or a…
It is shown that a flux of unpolarized electrons across a symmetric double barrier quantum well induces a spin polarization inside the well. Besides, the transmitted current acquires a spin polarized component and the spin-Hall current…
A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of…
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled…
We investigate the spin dynamics and relaxation in remotely-doped two dimensional electron systems where the dopants lead to random fluctuations of the Rashba spin-orbit coupling. Due to the resulting random spin precession, the spin…
We consider theoretically transport in a spinfull one-channel interacting quantum wire placed in an external magnetic field. For the case of two point-like impurities embedded in the wire, under a small voltage bias the spin-polarized…
When electron spins are injected uniformly into a paramagnetic disc, they can precess along the demagnetizing field induced by the resulting magnetic moment. Normally this precession damps out by virtue of the spin relaxation which is…
We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…
Using mapping between topological defects in an easy-plane magnet and electrical charges, we study interplay between vorticity and spin currents. We demonstrate that the flow of vorticity is accompanied by the transverse spin current…
We monitor the Landau-Zener dynamics of a single-ion magnet in a spin-transistor geometry. For increasing field-sweep rates, the spin reversal probability shows increasing deviations from that of a closed system. In the low-conductance…
The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin…
Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for…
Reflection and transmission of electrons scattered by a rectangular potential step in the presence of an external magnetic field parallel to the electron beam is described with the use of the Dirac equation. It is shown that in addition to…
We investigate the spin-current linear response conductivity tensor to an electric field in a paramagnetic two dimensonal electron gas with both Rashba and Dresselhaus spin-orbit coupling in the weak scattering regime. In the ususal case…
A brief review is given on the spin Hall effect, where an external electric field induces a transverse spin current. It has been recognized over 30 years that such effect occurs due to impurities in the presence of spin-orbit coupling.…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect…
A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr,…
We describe the coherent interaction between a defect spin at the interface of a ferromagnet and a non-magnetic material, under bias and when the magnetization of the ferromagnetic contact precesses during ferromagnetic resonance. The…