Related papers: Single-electron Tunneling with Strong Mechanical F…
We demonstrate the feasibility of a strong feedback regime for a single-electron tunneling device weakly coupled to an underdamped single-mode oscillator. In this regime, mechanical oscillations are generated and the current is strongly…
We investigate strong mechanical feedback for the single-electron tunneling device coupled to an underdamped harmonic oscillator in the high-frequency case, when the mechanical energy of the oscillator exceeds the tunnel rate, and for weak…
We investigate electric current in a single-electron tunnelling device weakly coupled to an ac-driven underdamped harmonic nanomechanical oscillator. In the linear regime, the current can respond to the external frequency in a resonant as…
A single-electron transistor incorporated as part of a nanomechanical resonator represents an extreme limit of electron-phonon coupling. While it allows for fast and sensitive electromechanical measurements, it also introduces backaction…
Nanoscale resonators that oscillate at high frequencies are useful in many measurement applications. We studied a high-quality mechanical resonator made from a suspended carbon nanotube driven into motion by applying a periodic radio…
We describe single electron tunneling through molecular structures under the influence of nano-mechanical excitations. We develop a full quantum mechanical model, which includes charging effects and dissipation, and apply it to the…
We investigate a superconducting single-electron transistor capacitively coupled to a nanomechanical oscillator and focus on the double Josephson quasiparticle resonance. The existence of two coherent Cooper pair tunneling events is shown…
The nanomechanical single-electron shuttle is a resonant system in which a suspended metallic island oscillates between and impacts at two electrodes. This setup holds promise for one-by-one electron transport and the establishment of an…
We demonstrate the effect of single-electron tunneling (SET) through a carbon nanotube quantum dot on its nanomechanical motion. We find that the frequency response and the dissipation of the nanoelectromechanical system (NEMS) to SET…
We derive self-consistent expressions of current and noise for single-electron transistors driven by time-dependent perturbations. We take into account effects of the electrical environment, higher-order co-tunneling, and time-dependent…
In this Letter, we study the transient electron transfer phenomena of single-electron devices with alternating external gate voltages. We obtain a high frequency limit for pumping electrons one at a time in single-electron devices. Also, we…
Current and its noise in a ferromagnetic double tunnel barrier device with a small spacer particle were studied in the framework of the sequential tunneling approach. Analytical formulae were derived for electron tunneling through the…
Electronic processes in a semiconductor system consisting of some Resonant Tunnelling Structures, built in the depletion region of a Schottky barrier, are investigated. It is shown that the Schottky barrier can block or unblock the resonant…
We investigate electrical transport through a single-electron transistor coupled to a nanomechanical oscillator. Using a combination of a master-equation approach and a numerical Monte Carlo method, we calculate the average current and the…
Nanoelectromechanical systems (NEMS) are devices integrating electrical and mechanical functionality on the nanoscale. Because of individual electron tunneling, such systems can show rich self-induced, highly non-linear dynamics. We show…
A single-electron tunneling (SET) device with a nanoscale central island that can move with respect to the bulk source- and drain electrodes allows for a nanoelectromechanical (NEM) coupling between the electrical current through the device…
Charging a nano-scale oscillator by single electron tunneling leads to an effective double-well potential due to image charges. We combine exact numerical diagonalizations with generalized Master equations and show that the resulting…
For carbon nanotube transistors, as for graphene, the electrical contacts are a key factor limiting device performance. We calculate the device characteristics as a function of nanotube diameter and metal workfunction. Although the on-state…
An analytical analysis of quantum shuttle phenomena in a nanoelectromechanical single-electron transistor has been performed in the realistic case, when the electron tunnelling length is much greater than the amplitude of the zero point…
We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the…