We describe single electron tunneling through molecular structures under the influence of nano-mechanical excitations. We develop a full quantum mechanical model, which includes charging effects and dissipation, and apply it to the vibrating C60 single electron transistor experiment by Park {\em et al.} {[Nature {\bf 407}, 57 (2000)].} We find good agreement and argue vibrations to be essential to molecular electronic systems. We propose a mechanism to realize negative differential conductance using local bosonic excitations.
@article{arxiv.cond-mat/0012140,
title = {Influence of nano-mechanical properties on single electron tunneling: A vibrating Single-Electron Transistor},
author = {Daniel Boese and Herbert Schoeller},
journal= {arXiv preprint arXiv:cond-mat/0012140},
year = {2009}
}