Related papers: Large Anomalous Hall effect in a silicon-based mag…
The development of two-dimensional (2D) room temperature magnets is of great significance to the practical application of spintronic devices. However, the number of synthesized intrinsic 2D magnets is limited and the performances of them…
Altermagnets are a novel type of magnetic system that has a spin-polarised electric band structure in the absence of a net magnetic moment, leading to exciting prospects in potential device applications. Hexagonal MnTe, a prototypical…
Magnetic and magneto-transport properties of manganese nitride films grown by molecular beam epitaxy have been investigated. Due to the mixed ferrimagnetic (FI) phase (${\epsilon}$-phase with TFI ~ 738 K) and the antiferromagnetic phase…
Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in ZnMnO thin films grown on Al2O3 and MgO substrates. The magnetic properties depended on the exact Mn…
Tuning magnetic properties of magnetic topological materials is of interest to realize elusive physical phenomena such as quantum anomalous hall effect (QAHE) at higher temperatures and design topological spintronic devices. However,…
We have investigated the magnetoresistance of ferromagnet-semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of our device is large. The…
The Weyl antiferromagnet Mn$_3$Sn has recently attracted significant attention as it exhibits various useful functions such as large anomalous Hall effect that are normally absent in antiferromagnets. Here we report the thin film…
The electronic structure of diluted (Ga,Mn)As magnetic semiconductors in the presence of As-antisites and magnetic disorder is studied within the framework of the local spin density approximation. Both the chemical and magnetic disorders…
2D ferromagnets offer valuable insights into the fundamentals of magnetism and stimulate the progress of ultracompact spintronics. The demand for seamless integration of the materials with the Si technology, particularly helpful to their…
It is proposed that the new generation of spintronics should be ideally massless and dissipationless for the realization of ultra-fast and ultra-low-power spintronic devices. We demonstrate that the spin-gapless materials with linear energy…
Kagome lattice, made of corner-sharing triangles, provides an excellent platform for hosting exotic topological quantum states. Here we systematically studied the magnetic and transport properties of RMn6Sn6 (R = Tb, Dy, Ho) with clean Mn…
Antiferromagnets with tunable phase transitions are promising for future spintronics applications. We investigated spin-dependent transport properties of FeRh thin films, which show a temperature driven antiferromagnetic-to-ferromagnetic…
The search of new topological insulators that demonstrate the quantum anomalous Hall effect (QAHE) is a cutting-edge research topic in condensed matter physics and materials science. So far, the QAHE has been observed only in Cr-doped…
Antiferromagnets with broken time-reversal symmetry, such as Mn3Sn, have emerged as promising platforms for exploring topological and correlated electron physics. Mn3Sn is known to show two magnetic phase transitions: a non-collinear…
In this work the theoretical and experimental investigations of Co2TiZ (Z = Si, Ge, or Sn) compounds are reported. Half-metallic ferromagnetism is predicted for all three compounds with only two bands crossing the Fermi energy in the…
We investigated temperature dependent current driven spin-orbit torques in magnetron sputtered Ru2Sn3 (4 and 10 nm) /Co20Fe60B20 (5 nm) layered structures with in-plane magnetic anisotropy. The room temperature damping-like and field-like…
Integrating spin-dependent functionality with mainstream semiconductor technology is a central goal of modern spintronics, yet most candidate materials remain incompatible with silicon-based platforms. Here, we report the direct epitaxial…
The great obstacle for practical applications of the quantum anomalous Hall (QAH) effect is the lack of suitable QAH materials (Chern insulators) with large non-trivial band gap, room-temperature magnetic order and high carrier mobility.…
The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant…
The Anomalous Hall Effect was investigated in IV-VI ferromagnetic semimagnetic semiconductors of Sn1-xMnxTe codoped with either Eu or Er. The analysis of experimental data: Hall resisitivity and magnetization showed that AHE coefficient RS…