English

NiCl3 Monolayer: Dirac Spin-Gapless Semiconductor and Chern Insulator

Materials Science 2017-03-01 v1

Abstract

The great obstacle for practical applications of the quantum anomalous Hall (QAH) effect is the lack of suitable QAH materials (Chern insulators) with large non-trivial band gap, room-temperature magnetic order and high carrier mobility. The Nickle chloride (NiCl3) monolayer characteristics are investigated herein using first-principles calculations. It is reported that NiCl3 monolayers constitute a new class of Dirac materials with Dirac spin-gapless semiconducting and high-temperature ferromagnetism (~400K). Taking into account the spin-orbit coupling, the NiCl3 monolayer becomes an intrinsic insulator with a large non-trivial band gap of ~24 meV, corresponding to an operating temperature as high as ~280K at which the quantum anomalous Hall effect could be observed. The calculated large non-trivial gap, high Curie temperature and single-spin Dirac states reported herein for the NiCl3 monolayer lead us to propose that this material give a great promise for potential realization of a near-room temperature QAH effect and potential applications in spintronics. Last but not least the calculated Fermi velocities of Dirac fermion of about 4x105 m/s indicate very high mobility in NiCl3 monolayers.

Keywords

Cite

@article{arxiv.1610.00407,
  title  = {NiCl3 Monolayer: Dirac Spin-Gapless Semiconductor and Chern Insulator},
  author = {Junjie He and Xiao Li and Pengbo Lyu and Petr Nachtigall},
  journal= {arXiv preprint arXiv:1610.00407},
  year   = {2017}
}

Comments

17 pages, 6 figures, conference or other essential info

R2 v1 2026-06-22T16:08:23.846Z