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Related papers: Hall effect in Fe$_3$O$_4$ epitaxial thin films

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Epitaxial thin film fabrication of iron oxides including magnetite Fe3O4 and epsilon-ferrite epsilon-Fe2O3 with the potential for advancing electromagnetic devices has been investigated, which led to the first ever epsilon-ferrite epitaxial…

Applied Physics · Physics 2019-04-24 Masato Watanabe

We fabricate van der Waals heterostructure devices using few unit cell thick Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ for magnetotransport measurements. The superconducting transition temperature and carrier density in atomically thin samples can…

We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous…

Mesoscale and Nanoscale Physics · Physics 2017-08-22 F. D. Parmentier , T. Cazimajou , Y. Sekine , H. Hibino , H. Irie , D. C. Glattli , N. Kumada , P. Roulleau

The anomalous Hall effect (AHE) in strongly disordered magnetic systems has been buried in persistent confusion despite its long history. We report the AHE in perpendicularly magnetized L10-MnAl epitaxial films with variable orbital…

Strongly Correlated Electrons · Physics 2016-05-10 L. J. Zhu , S. H. Nie , J. H. Zhao

Topological magnetic semimetals promise large Berry curvature through the distribution of the topological Weyl nodes or nodal lines and further novel physics with exotic transport phenomena. We present a systematic study of the structural…

The quantum anomalous Hall (QAH) effect has recently been realized in thin films of intrinsic magnetic topological insulators (IMTIs) like MnBi$_2$Te$_4$. Here we point out that that the QAH gaps of these IMTIs can be optimized, and that…

Mesoscale and Nanoscale Physics · Physics 2021-10-20 Chao Lei , Allan H. MacDonald

It is shown that the observed Quantum Hall Effect in epitaxial layers of heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path of the conduction electrons (15-30 nm) and, therefore, with a three-dimensional…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 S. S. Murzin , I. Claus , A. G. M. Jansen , N. T. Moshegov , A. I. Toropov , K. Eberl

High quality vanadium sesquioxide V2O3 films (170-1100 {\AA}) were grown using the pulsed laser deposition technique on (0001)-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties…

Strongly Correlated Electrons · Physics 2008-01-07 C. Grygiel , Ch. Simon , B. Mercey , W. Prellier , P. Limelette , R. Fresard

In this work, we present the investigation of temperature dependent hall measurement of the ultra thin VO$_2$ films grown on Si/SiO$_2$ substrate. Experimental results suggest that electrons are the predominant carrier both in the…

Materials Science · Physics 2016-09-19 Fangfang Song , B. E. White.

The influence of Sb content, substrate type and cap layers on the quantum anomalous Hall effect observed in V-doped (Bi,Sb)$_2$Te$_3$ magnetic topological insulators is investigated. Thin layers showing excellent quantization are…

Mesoscale and Nanoscale Physics · Physics 2017-07-05 M. Winnerlein , S. Schreyeck , S. Grauer , S. Rosenberger , K. M. Fijalkowski , C. Gould , K. Brunner , L. W. Molenkamp

Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended…

We report a detailed magnetic and structural analysis of highly reduced Co doped rutile TiO2 films displaying an anomalous Hall effect (AHE). The temperature and field dependence of magnetization, and transmission electron microscopy…

We report the observation of a quantum anomalous Hall effect in twisted bilayer graphene showing Hall resistance quantized to within .1\% of the von Klitzing constant $h/e^2$ at zero magnetic field.The effect is driven by intrinsic strong…

Strongly Correlated Electrons · Physics 2020-03-18 M. Serlin , C. L. Tschirhart , H. Polshyn , Y. Zhang , J. Zhu , K. Watanabe , T. Taniguchi , L. Balents , A. F. Young

We study the anomalous Hall effect in binary alloys between the group-10 elements Ni and Pt. It is observed that the ordinary Hall effect is negative (electron-like) at any composition of the alloy. The extraordinary Hall effect is also…

Materials Science · Physics 2013-03-15 Taras Golod , Andreas Rydh , Peter Svedlindh , Vladimir M. Krasnov

The electrical Hall effect can be significantly enhanced through the interplay of the conduction electrons with magnetism, which is known as the anomalous Hall effect (AHE). Whereas the mechanism related to band topology has been…

Mn$_2$VAl Heusler alloy films were epitaxially grown on MgO(100) single crystal substrates by means of ultra-high-vacuum magnetron sputtering. A2 and L2$_1$ type Mn$_2$VAl order was controlled by the deposition temperatures. A2-type…

Magnetotransport is investigated in thin films of the half-metallic ferrimagnet Mn$_2$Ru$_x$Ga in pulsed magnetic fields of up to 58 T. A non-vanishing Hall signal is observed over a broad temperature range, spanning the compensation…

An applied electric field can reversibly change the temperature of an electrocaloric material under adiabatic conditions, and the effect is strongest near phase transitions. This phenomenon has been largely ignored because only small…

Materials Science · Physics 2009-11-11 A. Mischenko , Q. Zhang , J. F. Scott , R. W. Whatmore , N. D. Mathur

The Hall effect is investigated in detail for nonsuperconducting and superconducting FeTe thin films. The Hall coefficient commonly exhibits a sign reversal from positive in a high-temperature paramagnetic state to negative in a…

Superconductivity · Physics 2015-03-17 I. Tsukada , M. Hanawa , Seiki Komiya , A. Ichinose , T. Akiike , Y. Imai , A. Maeda

We report on a systematic study of Hall effect using high quality single crystals of type-II Weyl semimetal WTe2 with the applied magnetic field B//c. The residual resistivity ratio of 1330 and the large magnetoresistance of 1.5\times10^6 %…

Materials Science · Physics 2017-10-03 Rajveer Jha , Ryuji Higashinaka , Tatsuma D. Matsuda , Raquel A. Ribeiro , Yuji Aoki