Quantum Hall Effect induced by electron-electron interaction in disordered GaAs layers with 3D spectrum
Abstract
It is shown that the observed Quantum Hall Effect in epitaxial layers of heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path of the conduction electrons (15-30 nm) and, therefore, with a three-dimensional single-particle spectrum is induced by the electron-electron interaction. The Hall resistance R_xy of the thinnest sample reveals a wide plateau at small activation energy E_a=0.4 K found in the temperature dependence of the transverse resistance R_xx. The different minima in the transverse conductance G_xx of the different samples show a universal temperature dependence (logarithmic in a large range of rescaled temperatures T/T_0) which is reminiscent of electron-electron-interaction effects in coherent diffusive transport.
Cite
@article{arxiv.cond-mat/9810224,
title = {Quantum Hall Effect induced by electron-electron interaction in disordered GaAs layers with 3D spectrum},
author = {S. S. Murzin and I. Claus and A. G. M. Jansen and N. T. Moshegov and A. I. Toropov and K. Eberl},
journal= {arXiv preprint arXiv:cond-mat/9810224},
year = {2009}
}
Comments
6 pages, 3 figures, 1 table