Related papers: Hall effect in Fe$_3$O$_4$ epitaxial thin films
We present the magnetotransport properties of very thin (5 to 15 nm) single (Ga,Mn)As layers grown by low temperature molecular beam epitaxy. A lower (Ga,Mn)As thickness limit of 5 nm for the ferromagnetic phase and the dependence of the…
We report an investigation of transverse Hall resistance and longitudinal resistance on Pt thin films sputtered on epitaxial LaCoO$_3$ (LCO) ferromagnetic insulator films. The LaCoO$_3$ films were deposited on several single crystalline…
We investigate the evolution of spin polarization, spontaneous Hall angle (SHA), saturation magnetization and Curie temperature of $B2$-ordered Fe$_{60}$Al$_{40}$ thin films under varying antisite disorder, induced by Ne$^{+}$-ion…
Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of…
The Fe$_3$O$_4$/Si films are considered to be promising materials for THz spintronic applications due to their high temperature magnetic transition and semiconducting properties. In this article, we present the real part of the dielectric…
We report the structural and physical properties of epitaxial Bi2FeCrO6 thin films on epitaxial SrRuO3 grown on (100)-oriented SrTiO3 substrates by pulsed laser ablation. The 300 nm thick films exhibit both ferroelectricity and magnetism at…
Mn$_{3}$Sn is a non-collinear antiferromagnet which displays a large anomalous Hall effect at room temperature. It is believed that the principal contribution to its anomalous Hall conductivity comes from Berry curvature. Moreover, dc…
Magnetic and magneto-transport properties of manganese nitride films grown by molecular beam epitaxy have been investigated. Due to the mixed ferrimagnetic (FI) phase (${\epsilon}$-phase with TFI ~ 738 K) and the antiferromagnetic phase…
We have carried out a systematic experimental investigation to address the question why thin films of Fe$_3$O$_4$ (magnetite) generally have a very broad Verwey transition with lower transition temperatures as compared to the bulk. We…
This work demonstrated two different kinds of magneto-transport behaviors in epitaxial $L1_{0}$ MnAl film as a function of temperature. The magneto-resistance ratio (MR) was negative and exhibited evident enhancement in the resistivity at…
Digital alloys of GaSb/Mn have been fabricated by molecular beam epitaxy. Transmission electron micrographs showed good crystal quality with individual Mn-containing layers well resolved; no evidence of 3D MnSb precipitates was seen in…
Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence of the anomalous Hall effect…
By using a two-step method, we successfully synthesized the iron based new superconductor LaO$_{0.9}$F$_{0.1-x}$FeAs. The Hall effect and magnetoresistance were measured in wide temperature region. A negative Hall coefficient R_H has been…
Pt ultrathin films on ferromagnetic insulators have been widely studied for spintronics applications, and magnetic moments of interface Pt atoms were considered to be ferromagnetically ordered due to a magnetic proximity effect (MPE). An…
We describe a detailed study of the structural, magnetic, and magneto-transport properties of single-crystal, n-type, Mn-doped Bi2Te3 thin films grown by molecular beam epitaxy. With increasing Mn concentration, the crystal structure…
The magnetization as a function of magnetic field showed hysteretic behavior at room temperature. According to the temperature dependence of the magnetization, the Curie temperature $(T_{C})$ is higher than 350 K. Ferromagnetic Mn-doped tin…
Integrating spin-dependent functionality with mainstream semiconductor technology is a central goal of modern spintronics, yet most candidate materials remain incompatible with silicon-based platforms. Here, we report the direct epitaxial…
Thin Co/Pd multilayers, with room temperature perpendicular anisotropy and an enhanced surface scattering, were studied for the possible use in the extraordinary Hall effect (EHE) - based magnetic memory devices. Polarity of the EHE signal…
We have performed precise Hall measurements for the ferrotoroidic candidate material UNi4B. Below Neel temperature TN ~ 20 K (corresponding to the ferrotoroidic transition temperature), a Hall voltage becomes finite even at zero field and…
The magnetic state of heavy metal Pt thin films in proximity to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$ has been investigated systematically by means of x-ray magnetic circular dichroism and x-ray resonant magnetic reflectivity…