Related papers: Shot noise in tunneling through a single quantum d…
The shot noise suppression in a sample containing a layer of self-assembled InAs quantum dots has been investigated experimentally and theoretically. The observation of a non-monotonic dependence of the Fano factor on the bias voltage in a…
We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise…
A gate-defined quantum dot in an InAs nanowire is fabricated on top of a quantum point contact realized in a two-dimensional electron gas. The strong coupling between these two quantum devices is used to perform time-averaged as well as…
We investigate the noise properties of a GaAs/AlGaAs resonant tunneling structure at bias voltages where the current characteristic is determined by single electron tunneling. We discuss the suppression of the shot noise in the framework of…
We measure the current and shot noise in a quantum dot (QD) in the Kondo regime to address the non-equilibrium properties of the Kondo effect. By systematically tuning the temperature and gate voltages to define the level positions in the…
In this paper, we present theoretical investigation of the zero-frequency shot noise spectra in electron tunneling through an interacting quantum dot connected to two ferromagnetic leads with possibility of spin-flip scattering between the…
We study the noise of the cotunneling current through one or several tunnel-coupled quantum dots in the Coulomb blockade regime. The various regimes of weak and strong, elastic and inelastic cotunneling are analyzed for quantum-dot systems…
Using a large-N theory in combination with the Keldysh non-equilibrium Greens function formalism, we investigate the current, differential conductance, zero-frequency shot-noise and Fano factor as measured by scanning tunneling shot noise…
The low-frequency shot noise properties of two electrostatically coupled semiconductor quantum dot states which are connected to emitter/collector contacts are studied. A master equation approach is used to analyze the bias voltage…
We investigate the full counting statistics of a single quantum dot strongly coupled to a local phonon and weakly tunnel-connected to two metallic electrodes. By employing the generalized nonequilibrium Green function method and the…
We report our studies of zero-frequency shot noise in tunneling through a parallel-coupled quantum dot interferometer by employing number-resolved quantum rate equations. We show that the combination of quantum interference effect between…
We investigate shot noise at {\it finite temperatures} induced by the quasi-particle tunneling between fractional quantum Hall (FQH) edge states. The resulting Fano factor has the peak structure at a certain bias voltage. Such a structure…
Due to the Fermi-Dirac statistics of electrons the temporal correlations of tunneling events in a double barrier setup are typically negative. Here, we investigate the shot noise behavior of a system of two capacitively coupled quantum dot…
We report a precise experimental study on the shot noise of a quantum point contact (QPC) fabricated in a GaAs/AlGaAs based high-mobility two-dimensional electron gas (2DEG). The combination of unprecedented cleanliness and very high…
The current noise in a quantum dot coupled to two leads is investigated in the Kondo regime with and without the influence of magnetic fields by employing a finite-$U$ slave-boson mean field theory to calculate the current-current…
The shot noise of a one-dimensional wire interrupted by two barriers shows interesting features related to the interplay between Coulomb blockade effects, Luttinger correlations and discrete excitations. At small bias the Fano factor…
In this paper, we carry out a theoretical analysis of the zero-frequency and finite-frequency shot noise in electron tunneling through a two-level interacting system connected to two leads, when a coherent coupling between the two levels is…
We show that shot noise in a resonant tunneling diode biased in the negative differential resistance regions of the I-V characteristic is enhanced with respect to ``full'' shot noise. We provide experimental results showing a Fano factor up…
We analyze shot noise in a magnetic tunnel junction with a two-level quantum dot attached to the magnetic electrodes. The considerations are limited to the case when some transport channels are suppressed at low temperatures. Coupling of…
In this paper we report a relaxation-induced suppression of the noise for a single level quantum dot coupled to an oscillator with incoherent dynamics in the sequential tunneling regime. It is shown that relaxation induces qualitative…