Related papers: Single-electron transistors in electromagnetic env…
We predict theoretically and observe in experiment that the differential conductance of a superconducting SET transistor exhibits a peak which is a complete analogue in a macroscopic system of a standard resonant tunneling peak associated…
We review experiments on small-capacitance Josephson junctions. When the Josephson junction is fabricated in the configuration of dc superconducting quantum interference device (SQUID), the Josephson coupling can be tuned IN SITU with an…
For a capacitor made of a semiconducting carbon nanotube (CNT) suspended above a metallic gate, Coulomb correlations between individual electrons can lead to a capacitance that is much larger than the geometric capacitance. We argue that…
We study a double quantum dot each dot of which is tunnel-coupled to superconducting leads. In the Coulomb blockade regime, a spin-dependent Josephson coupling between two superconductors is induced, as well as an antiferromagnetic…
Three terminal single-electron transistor devices utilizing Al/Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets. The devices were patterned via multiple layers of optical…
The current-voltage characteristics through a metallic quantum dot which is well coupled to a metallic lead are measured. It is shown that the I-V curves are composed of two contributions. One is a suppression of the tunneling conductivity…
We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
We report on the realization of a coupled quantum dot (QD) system containing two single QDs made in two adjacent InAs nanowires. One QD (sensor QD) is used as a charge sensor to detect the charge state transition in the other QD (target…
We report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) electrically connected to an electron reservoir. The sensing device is a single electron transistor (SET) patterned in close proximity to the DQD.…
Single electron transistors (SETs) are very sensitive electrometers and they can be used in a range of applications. In this paper we give an introduction to the SET and present a full quantum mechanical calculation of how noise is…
Thermoelectric effects in normal metals and superconductors are usually very small due to the presence of electron-hole symmetry. Here, we show that superconducting junctions brought out of equilibrium manifest a sizable bipolar…
We study the interplay between Coulomb blockade and superconductivity in a tunable superconductor-superconductor-normal metal single-electron transistor. The device is realized by connecting the superconducting island via an oxide barrier…
We study resonant tunneling through a single-level quantum dot in the presence of strong Coulomb repulsion beyond the perturbative regime. The level is either spin-degenerate or can be split by a magnetic field. We, furthermore, discuss the…
Using a classical equation of motion, dynamics of the phase is analyzed in the Inductive Single-Electron Transistor (L-SET) which is a promising new system suitable for quantum measurement with ultimate sensitivity and low back-action. In a…
We study transport of spin-polarized electrons through a magnetic single-electron transistor (SET) in the presence of an external magnetic field. Assuming the SET to have a nanometer size central island with a single electron level we find…
Theoretical studies of the tunnelling current and emission spectrum of a single electron transistor (SET) under optical pumping are presented. The calculation is performed via Keldysh Green's function method within the Anderson model with…
The single electron transistor (SET) is a prime candidate for reading out the final state of a qubit in a solid state quantum computer. Such a measurement requires the detection of sub-electron charge motion in the presence of random…
We theoretically investigate charge transport through serial double quantum dots (SDQDs) with strong electron correlations using nonequilibrium Green's function techniques. In the linear response regime, we compute the charge stability…
In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$…