Related papers: Single-electron transistors in electromagnetic env…
The theory of dynamical Coulomb blockade is extended to tunneling elements driven by a time-dependent voltage. It is shown that for standard set-ups where an external voltage is applied to a tunnel junction via an impedance, time-dependent…
We outline the qualitatively different physics behind charging-induced current asymmetries in molecular conductors operating in the weakly interacting self-consistent field (SCF) and the strongly interacting Coulomb Blockade (CB) regimes. A…
A numerical model based on a lumped circuit element approximation for a bi-superconducting quantum interference device (bi-SQUID) operating in the presence of an external magnetic field is presented in this paper. Included in the model is…
We theoretically investigate quantum fluctuation of charge between even and odd states of a normal-superconducting-normal single-electron tunneling transistor. It is shown that due to the superconducting gap, the charge fluctuation in the…
Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…
We study electron transport through single-electron spin-valve transistors in the presence of non-local exchange between the ferromagnetic leads and the central normal-metal island. The Coulomb interaction is described with the orthodox…
We study the equilibrium properties of a quantum dot connected to a bulk lead by a single-mode quantum point contact. The ground state energy and other thermodynamic characteristics of the grain show periodic dependence on the gate voltage…
Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons…
We review the quantum interference effects in a system of interacting electrons confined to a quantum dot. The review starts with a description of an isolated quantum dot. We discuss the status of the Random Matrix theory (RMT) of the…
A tunable directional coupler based on Coulomb Blockade effect is presented. Two electron waveguides are coupled by a quantum dot to an injector waveguide. Electron confinement is obtained by surface Schottky gates on single GaAs/AlGaAs…
We explore the finite bias DC differential conductance of a correlated quantum dot under the influence of an AC field, from the low-temperature Kondo to the finite temperature Coulomb blockade regime. Real-time simulations are performed…
An Al-AlO_x-Al single-electron transistor (SET) acting as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned Si SET at the Si/SiO_2 interface near the MOSFET channel…
We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that…
The small footprint of semiconductor qubits is favourable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in gate structure. Currently, each device requires tailored…
We have reproducibly contacted gated single wall carbon nanotubes (SWCNT) to superconducting leads based on niobium. The devices are identified to belong to two transparency regimes: The Coulomb blockade and the Kondo regime. Clear…
We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and…
We consider exciton effects on current in molecular nanojunctions, using a model comprising a two two-level sites bridge connecting free electron reservoirs. Expanding the density operator in the many-electron eigenstates of the uncoupled…
Quantum dots (QDs) investigated through electron transport measurements often exhibit varying, state-dependent tunnel couplings to the leads. Under specific conditions, weakly coupled states can result in a strong suppression of the…
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…
We analyze the charge dynamics of a superconducting single-electron transistor (SSET) in the regime where charge transport occurs via Cooper-pair resonances. Using an approximate description of the system Hamiltonian, in terms of a series…