Related papers: Magnetoconductivity of Insulating Silicon Inversio…
For an electron density near the H=0 insulator-to-conductor transition, the magnetoconductivity of the low-temperature conducting phase in high-mobility silicon MOSFETs is consistent with the form…
For a broad range of electron densities $n$ and temperatures $T$, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFET's can be scaled onto a universal curve with a single parameter…
A detailed comparison is presented of the temperature dependence of the conductivity of dilute, strongly interacting electrons in two-dimensional silicon inversion layers in the metallic regime in the presence and in the absence of a…
The resistivities of the dilute, strongly-interacting 2D electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by…
We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, $n_{cr}\sim 10^{11}$ cm$^{-2}$),…
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…
The temperature dependence of conductivity $\sigma (T)$ of a two-dimensional electron system in silicon has been studied in parallel magnetic fields B. At B=0, the system displays a metal-insulator transition at a critical electron density…
The in-plane magnetoconductance of the strongly interacting two-dimensional electron system in a silicon MOSFET (metal-oxide-semiconductor-field-effect transistor) exhibits an unmistakeable kink at a well-defined electron density, $n_k$.…
The anomalous conducting phase that has been shown to exist in zero field in dilute two-dimensional electron systems in silicon MOSFETs is driven into a strongly insulating state by a magnetic field of about 20 kOe applied parallel to the…
We have studied the temperature dependence of resistivity, $\rho$, for a two-dimensional electron system in silicon at low electron densities, $n_s\sim10^{11}$ cm$^{-2}$, near the metal/insulator transition. The resistivity was empirically…
We report a magneto-induced topological phase transition in inverted InAs/GaSb bilayers from a quantum spin Hall insulator to a normal insulator. We utilize a dual-gated Corbino device in which the degree of band inversion, or equivalently…
We consider quasi-two-dimensional gas of electrons in a typical Si-MOSFET, assuming repulsive contact interaction between electrons. Magnetisation and susceptibility are evaluated within the mean-field approach. Finite thickness of the…
For the two-dimensional electron system in silicon MOSFET's, the scaled magnetoconductivity has been shown to exhibit critical behavior at finite density $n_0$. Analysis of these magnetotransport experiments yields a product $g^*m^*$ that…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…
The apparent metal-insulator transition is observed in a high quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si_{1-x}Ge_x heterostructure with mobility \mu=1.9 x 10^5 cm^2/Vs at density n=1.45 x…
The magnetoresistance of thin superconducting strips subject to a perpendicular magnetic field B and low temperatures T manifests a sequence of alternating superconductor-insulator transitions (SIT). We study this phenomenon within a quasi…
The response to a parallel magnetic field of the very dilute insulating two-dimensional system of electrons in silicon MOSFET's is dramatic and similar to that found on the conducting side of the metal-insulator transition: there is a large…
The magnetic field B_c, in which the electrons become fully spin-polarized, is found to be proportional to the deviation of the electron density from the zero-field metal-insulator transition in a two-dimensional electron system in silicon.…
Magnetoconductance (MC) in a parallel magnetic field B has been measured in a two-dimensional electron system in Si, in the regime where the conductivity decreases as \sigma (n_s,T,B=0)=\sigma (n_s,T=0) + A(n_s)T^2 (n_s -- carrier density)…
For densities above $n=1.6 \times 10^{11}$ cm$^{-2}$ in the strongly interacting system of electrons in two-dimensional silicon inversion layers, excellent agreement between experiment and the theory of Zala, Narozhny and Aleiner is…