Related papers: Magnetoconductivity of Insulating Silicon Inversio…
We investigate effects of strong correlation on the surface state of topological insulator (TI). We argue that electrons in the regime of crossover from weak anti-localization to weak localization, are strongly correlated and calculate…
The magnetotransport properties were studied in hundreds of micrometer length double-wall carbon nanotubes (DWCNT) bundles. Above 15 K the resistance shows an ohmic behavior and its temperature dependence is well described using the…
Under the influence of an external magnetic field and spin-changing collisions, the band insulator (BI) state of one-dimensional (1D) s-wave repulsively interacting 4-component fermions at half-filling transforms into Mott insulator (MI)…
It is well-known that the electric field can induce phase transitions between superconducting, metallic and insulating states in thin-film materials due to its control of the charge carrier density. Since a similar effect on the charge…
We have measured the magnetoresistance of a very low density and an extremely high quality two-dimensional hole system. With increasing magnetic field applied perpendicularly to the sample we observe the sequence of insulating, $\nu=1/3$…
The scaling of the conductivity at the superfluid-insulator quantum phase transition in two dimensions is studied by numerical simulations of the Bose-Hubbard model. In contrast to previous studies, we focus on properties of this model in…
Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of two increase of the frequency of Shubnikov-de Haas oscillations at H>H_{sat}. This signals the onset of full spin…
It is well known that the metal-insulator transition in two dimensions for non-interacting fermions takes place at infinitesimal disorder. In contrast, the superconductor-to-insulator transition takes place at a finite critical disorder (on…
It is found that a strong inhomogeneous distribution of oxygen in single crystal La_{2}CuO_{4+\delta} can lead to the formation of isolated superconducting inclusions, the average hole concentration being no more than 0.0024 per Cu atom.…
Experiments investigating magnetic-field-tuned superconductor-insulator transition (HSIT) mostly focus on two-dimensional material systems where the transition and its proximate ground-state phases, often exhibit features that are seemingly…
Controllable geometric manipulation via micromachining techniques provides a promising tool for enhancing useful topological electrical responses relevant to future applications such as quantum information science. Here we present…
Universality of the extraordinary Hall effect scaling was tested in granular three-dimensional Ni-SiO2 films across the metal-insulator transition. Three types of magnetotransport behavior have been identified: metallic, weakly insulating…
We present tunneling spectroscopy and transport measurements on disordered indium oxide films that reveal the existence of a superconducting gap in an insulating state. Two films on both sides of the disorder induced superconductor to…
We argue that there is a new liquid phase in the two-dimensional electron system in Si MOSFETs at low enough electron densities. The recently observed metal-insulator transition results as a crossover from the percolation transition of the…
We investigate the behaviors of entanglement entropy in the holographical insulator/superconductor phase transition. We calculate the holographic entanglement entropy for two kinds of geometry configurations in a completely back-reacted…
We extract the quantum conductance fluctuations and study its magnetic field dependence in the gate-dependent transport of the topological electrons in bulk-insulating BiSbTeSe2 devices. While increasing the magnetic field from 0 to 12…
A seemingly anomalous enhancement of electron mobility in strained silicon inversion layers at high sheet densities has exposed a conspicuous gap between device physics theory and experiment in recent years. We show that the root of this…
We use the double exchange (DE) model via degenerate orbitals and tight-binding approximation to study the magnetoconductivity of a canted A-phase of pseudo-cubic manganites. It is argued that the model is applicable in a broad…
This letter reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFET's. At low temperatures both thermopower and conductivity show critical behavior…
The existence of a metal-insulator transition at zero magnetic field in two- dimensional electron systems has recently been confirmed in high mobility Si-MOSFETs. In this work, the temperature dependence of the resistivity of gated…