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Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 E. A. Barry , A. A. Kiselev , K. W. Kim

Multiple trapping and release (MTR) is a typical transport mechanism of electron carriers in amorphous and other disordered semiconductors where localized states are significant. Quantitative description of MTR, however, has been based on…

Disordered Systems and Neural Networks · Physics 2025-02-21 Yuezhou Luo , Andrew John Flewitt

Using Density functional theory and non-equilibrium Green's function formalism, spin dependent electron transport in Fe/Mo$_x$Cr$_{1-x}$S$_2$/Fe magnetic tunnel junction is studied. Spin transport for different thicknesses (1, 3, 5, and 7…

Materials Science · Physics 2026-01-06 Aloka Ranjan Sahoo , Sharat Chandra

Electron mobility, energy spectra and intrinsic carrier concentrations in the n-type Hg0.32Cd0.68Te / Hg1-xCdxTe / Hg0.32Cd0.68Te quantum well (QW) in semi-metallic state are numerically modeled. Energy spectra and wave functions were…

Materials Science · Physics 2015-11-25 E. O. Melezhik , J. V. Gumenjuk-Sichevska , F. F. Sizov

Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodetectors. The wide bandgap energy and the predicted high…

In this work, we investigate the effect of the stacking sequence in MoS2 multilayer systems on their electron transport properties, through first-principles simulations of structural and electron transport properties. We show that…

Materials Science · Physics 2018-11-09 Teresa Cusati , Alessandro Fortunelli , Gianluca Fiori , Giuseppe Iannaccone

Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where…

Strongly Correlated Electrons · Physics 2009-10-31 Tohru Okamoto , K. Hosoya , S. Kawaji , A. Yagi , A. Yutani , Y. Shiraki

We demonstrate a method of making a very shallow, gateable, undoped 2-dimensional electron gas. We have developed a method of making very low resistivity contacts to these structures and systematically studied the evolution of the mobility…

Mesoscale and Nanoscale Physics · Physics 2021-09-17 W. Y. Mak , K. Das Gupta , H. E. Beere , I. Farrer , F. Sfigakis , D. A. Ritchie

We report the experimental realization of a correlated insulating phase in 2D GaAs/AlGaAs heterostructures at low electron densities in a limited window of background disorder. This has been achieved at mesoscopic length scales, where the…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 M. Baenninger , A. Ghosh , M. Pepper , H. E. Beere , I. Farrer , P. Atkinson , D. A. Ritchie

Several doped semiconductors, in contrast to heavily-doped silicon and germanium, host extremely mobile carriers, which give rise to quantum oscillations detectable in relatively low magnetic fields. The small Fermi energy in these dilute…

Materials Science · Physics 2015-09-03 Kamran Behnia

In two dimensional electron systems with Coulomb or dipolar interactions, a direct transition, whether first or second order, from a liquid to a crystalline state is forbidden. As a result, between these phases there must be other…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 B. Spivak , S. Kivelson

Spin-based logic devices could operate at very high speed with very low energy consumption and hold significant promise for quantum information processing and metrology. Here, an in-house developed, experimentally verified, ensemble…

Computational Physics · Physics 2018-01-03 B. Thorpe , K. Kalna , F. C. Langbein , S Schirmer

Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different…

Mesoscale and Nanoscale Physics · Physics 2009-08-14 I. Knezevic , E. B. Ramayya , D. Vasileska , S. M. Goodnick

We study the in-plane transport of spin-polarized electrons in III-V semiconductor quantum wells. The spin dynamics is controlled by the spin-orbit interaction, which arises via the Dresselhaus (bulk asymmetry) and Rashba (well asymmetry)…

Mesoscale and Nanoscale Physics · Physics 2010-10-12 Semion Saikin , Min Shen , Ming-C. Cheng , Vladimir Privman

The electrical transport properties of amorphous Bi films prepared by sequential quench deposition have been studied in situ. A superconductor-insulator (S-I) transition was observed as the film was made increasingly thicker, consistent…

Superconductivity · Physics 2009-11-07 M. M. Rosario , Y. Liu

We demonstrate the trapping of electrons propagating ballistically at far-above-equilibrium energies in GaAs/AlGaAs heterostructures in high magnetic field. We find low-loss transport along a gate-modified mesa edge in contrast to an…

Mesoscale and Nanoscale Physics · Physics 2020-03-30 L. Freise , T. Gerster , D. Reifert , T. Weimann , K. Pierz , F. Hohls , N. Ubbelohde

We studied transport through ultra-small Si quantum dot transistors fabricated from silicon-on-insulator wafers. At high temperatures, 4K<T<100K, the devices show single-electron or single-hole transport through the lithographically defined…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 L. P. Rokhinson , L. J. Guo , S. Y. Chou , D. C. Tsui

We study transport properties of a two-dimensional electron gas, placed in a classically strong perpendicular magnetic field and in constant and oscillating in-plane electric fields. The analysis is based on a quantum Boltzmann equation…

Mesoscale and Nanoscale Physics · Physics 2009-01-09 M. Khodas , M. G. Vavilov

In the present work, an infrared LED is used to photodope MBE-grown Si:Al(0.3)Ga(0.7)As, a well known persistent photoconductor, to vary the effective electron concentration of samples in situ. Using this technique, we examine the transport…

We consider the problem of electron transport in segregated conductor-insulator composites in which the conducting particles are connected to all others via tunneling conductances, thus forming a global tunnelingconnected resistor network.…

Disordered Systems and Neural Networks · Physics 2012-01-23 B. Nigro , C. Grimaldi , P. Ryser