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Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Levente J. Klein , Donald E. Savage , Mark A. Eriksson

Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and…

The central challenge of quantum computing is implementing high-fidelity quantum gates at scale. However, many existing approaches to qubit control suffer from a scale-performance trade-off, impeding progress towards the creation of useful…

The challenges of operating qubits in a cryogenic environment point to a looming bottleneck for large-scale quantum processors, limited by the number of input-output connections. Classical processors solve this problem via multiplexing;…

Mesoscale and Nanoscale Physics · Physics 2024-10-18 M. A. Wolfe , Thomas McJunkin , Daniel R. Ward , DeAnna Campbell , Mark Friesen , M. A. Eriksson

We propose a digital-controlled conveyor-belt shuttling method for silicon-based quantum processors, addressing the scalability challenges of conventional analog sinusoidal implementations. By placing a switch matrix and low-pass filters in…

Quantum Physics · Physics 2025-12-16 Ryo Nagai , Takashi Takemoto , Yusuke Wachi , Hiroyuki Mizuno

With recent experimental advancements demonstrating high-fidelity universal logic gates and basic programmability, Silicon-based spin quantum bit (qubit) have emerged as promising candidates for scalable quantum computing. However,…

Quantum Physics · Physics 2024-10-07 Junghee Ryu , Hoon Ryu

Large power consumption of silicon CMOS electronics is a challenge in very-large-scale integrated circuits and a major roadblock to fault-tolerant quantum computation. Matching the power dissipation of Si-MOSFETs to the thermal budget at…

We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…

Mesoscale and Nanoscale Physics · Physics 2015-05-14 W. H. Lim , F. A. Zwanenburg , H. Huebl , M. Mottonen , K. W. Chan , A. Morello , A. S. Dzurak

Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing.…

Mesoscale and Nanoscale Physics · Physics 2020-01-14 H. G. J. Eenink , L. Petit , W. I. L. Lawrie , J. S. Clarke , L. M. K. Vandersypen , M. Veldhorst

We propose a setup for universal and electrically controlled quantum information processing with hole spins in Ge/Si core/shell nanowire quantum dots (NW QDs). Single-qubit gates can be driven through electric-dipole-induced spin resonance,…

Mesoscale and Nanoscale Physics · Physics 2013-12-17 Christoph Kloeffel , Mircea Trif , Peter Stano , Daniel Loss

Feedback control of quantum mechanical systems is rapidly attracting attention not only due to fundamental questions about quantum measurements but also because of its novel applications in many fields in physics. Quantum control has been…

Mesoscale and Nanoscale Physics · Physics 2017-11-15 T. Wagner , P. Strasberg , J. C. Bayer , E. P. Rugeramigabo , T. Brandes , R. J. Haug

Solid-state quantum computers require classical electronics to control and readout individual qubits and to enable fast classical data processing [1-3]. Integrating both subsystems at deep cryogenic temperatures [4], where solid-state…

The most promising quantum algorithms require quantum processors hosting millions of quantum bits when targeting practical applications. A major challenge towards large-scale quantum computation is the interconnect complexity. In current…

We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to…

Mesoscale and Nanoscale Physics · Physics 2011-04-08 Mingyun Yuan , Feng Pan , Zhen Yang , T. J. Gilheart , Fei Chen , D. E. Savage , M. G. Lagally , M. A. Eriksson , A. J. Rimberg

This paper presents a brief review of our recent work investigating a novel bottom-up approach to realize silicon based nanoelectronics. We discuss fabrication technique, electronic properties and device applications of silicon nanodots as…

Materials Science · Physics 2007-08-15 Hiroshi Mizumita , S. Oda

In this study, we explore the use of molecules and molecular electronics for quantum computing. We construct one-qubit gates using one-electron scattering in molecules, and two-qubit controlled-phase gates using electron-electron scattering…

Standard approaches to quantum computing require significant overhead to correct for errors. The hardware size for conventional quantum processors in solids often increases linearly with the number of physical qubits, such as for transmon…

The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step…

Building a practical quantum processor involves integrating millions of physical qubits along with the necessary components for individual qubit manipulation and readout. Arrays of gated silicon spins offer a promising route toward…

While ballistic electrons are a key tool for applications in sensing and flying qubits, sub-nanosecond propagation times and complicated interactions make control of ballistic single electrons challenging. Recent experiments have revealed…

Mesoscale and Nanoscale Physics · Physics 2024-12-23 J. D. Fletcher , W. Park , P. See , J. P. Griffiths , G. A. C. Jones , I. Farrer , D. A. Ritchie , H. -S. Sim , M. Kataoka