Related papers: Tunneling spin-galvanic effect
Conversion of heat into a spin-current in electron doped silicon can offer a promising path for spin-caloritronics. Here we create an electron spin polarization in the conduction band of n-type silicon by producing a temperature gradient…
We report on microwave (mw) radiation induced electric currents in (Cd,Mn)Te/(Cd,Mg)Te and InAs/(In,Ga)As quantum wells subjected to an external in-plane magnetic field. The current generation is attributed to the spin-dependent energy…
We propose a spin-dependent resonant tunneling structure to efficiently inject spin-polarized current into silicon (Si). By means of a heavily doped polycrystalline Si (Poly-Si) between the ferromagnetic metal (FM) and Si to reduce the…
We theoretically show how the spin orientation of a single magnetic adatom can be controlled by spin polarized electrons in a scanning tunneling microscope configuration. The underlying physical mechanism is spin assisted inelastic…
We propose a tunneling spin Hall effect in a normal metal/$p$-wave magnet/superconductor junction. It is found that the Andreev reflection in the normal lead is spin-dependent and exhibits strong asymmetry with respect to the transverse…
We discuss the charge and the spin tunneling currents between two Bardeen-Cooper-Schrieffer (BCS) superconductors, where one density of states is spin-split. In the presence of a large temperature bias across the junction, we predict the…
Spin-dependent tunneling through an indirect bandgap barrier like the GaAs/AlAs/GaAs heterostructure along [001] direction is studied by the tight-binding method. The tunneling is characterized by the proportionality of the Dresselhaus…
It is shown that the spin Hall current generates a non-equilibrium spin polarization in the interior of crystals with reduced symmetry in a way that is drastically different from the previously well-known equilibrium polarization during the…
We elucidate the multi-particle transport of pair- and spin-tunnelings in strongly correlated interfaces. Not only usual single-particle tunneling but also interaction-induced multi-particle tunneling processes naturally arise from a…
A theory of spin-polarized electron transport in ferromagnet-semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductors, is outlined. The aim is to provide a framework…
We have shown that electron spin density can be generated by a dc current flowing across a $pn$ junction with an embedded asymmetric quantum well. Spin polarization is created in the quantum well by radiative electron-hole recombination…
Spin-dependent partial conductances are evaluated in a tight-binding description of electron transport in the presence of spin-orbit (SO) couplings, using transfer-matrix methods. As the magnitude of SO interactions increases, the…
Resonant tunneling through semimetallic ErAs quantum wells embedded in GaAs structures with AlAs barriers was recently found to exhibit an intriguing behavior in magnetic fields which is explained in terms of tunneling selection rules and…
Spin-selective spatial filtering of propagating polariton condensates, using a controllable spin-dependent gating barrier, in a one-dimensional semiconductor microcavity ridge waveguide is reported. A nonresonant laser beam provides the…
Chiral molecules can selectively transport electrons of a particular spin orientation, yet the underlying mechanism remain poorly understood. Here, we present theoretical evidence that electrons propagating through chiral materials with…
We in this paper study theoretically the spin-polarized quantum transport through a T-shape quantum dot-array by means of transfer-matrix method along with the Green^{,}s function technique. Multi-magnetic fields are used to produce the…
The spin-dependent transport of the electrons tunneling through a resonant tunneling structure with ferromagnetic multi-terminal under dc and ac fields is explored by means of the nonequilibrium Green function technique. A general…
A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of…
We show that the parallel magnetic field-induced increase in the critical electron density for the Anderson transition in a strongly interacting two-dimensional electron system is caused by the effects of exchange and correlations. If the…
In this paper we review both theoretical and experimental studies on spin-related photogalvanic effects. A short phenomenological introduction is followed by the discussion of the circular photogalvanic effect, the direct and inverse…