Conversion of heat into a spin-current in electron doped silicon can offer a promising path for spin-caloritronics. Here we create an electron spin polarization in the conduction band of n-type silicon by producing a temperature gradient across a ferromagnetic tunnel contact. The substrate heating experiments induce a large spin signal of 95 μV, corresponding to 0.54 meV spin-splitting in the conduction band of n-type silicon by Seebeck spin tunneling mechanism. The thermal origin of the spin injection has been confirmed by the quadratic scaling of the spin signal with the Joule heating current and linear dependence with the heating power.
@article{arxiv.1403.3528,
title = {Thermal Creation of Electron Spin Polarization in n-Type Silicon},
author = {André Dankert and Saroj P. Dash},
journal= {arXiv preprint arXiv:1403.3528},
year = {2014}
}