Spincaloritronic signal generation due to thermal spin injection and spin transport is demonstrated in a non-degenerate Si spin valve. The spin-dependent Seebeck effect is used for the spincaloritronic signal generation, and the thermal gradient of about 200 mK at an interface of Fe and Si enables generating a spin voltage of 8 {\mu}V at room temperature. A simple expansion of a conventional spin drift-diffusion model with taking into account the spin-dependent Seebeck effect shows semiconductor materials are quite potential for the spincaloritronic signal generation comparing with metallic materials, which can allow efficient heat recycling in semiconductor spin devices.
@article{arxiv.1708.07108,
title = {Spincaloritronic signal generation in non-degenerate Si},
author = {Naoto Yamashita and Yuichiro Ando and Hayato Koike and Shinji Miwa and Yoshishige Suzuki and Masashi Shiraishi},
journal= {arXiv preprint arXiv:1708.07108},
year = {2018}
}