Related papers: Tunneling spin-galvanic effect
A directional photon-assisted resonant chiral tunneling through a bilayer graphene barrier is considered. An external electromagnetic field applied to the barrier switches the transparency $T$ in the longitudinal direction from its steady…
We start closing a gap in the comparison of experimental and theoretical data associated with the spin Hall effect. Based on a first-principles characterization of electronic structure and a semiclassical description of electron transport,…
Electrical spin orientation is the generation of electron spin proportional to the electric current. This phenomenon is allowed by symmetry in gyrotropic systems, e.g. in inversion-asymmetric structures with Rashba spin-orbit splitting.…
At low temperatures, the transport through a superconducting-normal tunnel interface is due to tunneling of electrons in pairs. The probability for this process is shown to depend on the layout of the electrodes near the tunnel junction,…
We report on theoretical investigations of scattering asymmetry vs. incidence of carriers through exchange barriers and magnetic tunnel junctions made of semiconductors involving spin-orbit interaction. By an analytical 2?2 spin model, we…
We theoretically examine generation of spin-polarized current using multi-terminated quantum dot with spin-orbit interaction. First, a two-level quantum dot is analyzed as a minimal model, which is connected to $N$ ($\ge 2$) external leads…
We study a two-dimensional electron system in the presence of spin-orbit interaction. It is shown analytically that the spin-orbit interaction acts as a transversal effective electric field, whose orientation depends on the sign of the…
We consider the problem of tunneling between two leads via a localized spin 1/2 or any other microscopic system which can be modeled by a two-level Hamiltonian. We assume that a constant magnetic field ${\bf B}_0$ acts on the spin, that…
The problem of spin-dependent transport of electrons through a finite array of quantum dots attached to 1D quantum wire (spin gun) for various semiconductor materials is studied. Unlike the model considered in [1] a model proposed here is…
We put forward a mechanism for current induced spin polarization for a hole in a quantum dot side-coupled to a quantum wire, that is based on the spin-orbit splitting of the valence band. We predict that in a stark contrast with the…
Spin Hall effect and its inverse provide essential means to convert charge to spin currents and vice versa, which serve as a primary function for spintronic phenomena such as the spin-torque ferromagnetic resonance and the spin Seebeck…
Efficient conversion of a spin signal into an electric voltage in mainstream semiconductors is one of the grand challenges of spintronics. This process is commonly achieved via a ferromagnetic tunnel barrier where non-linear electric…
Spin-dependent electron tunneling through a voltage-biased micro-constriction between two bulk superconductors is shown to create a static magnetization near the constriction and an ac Josephson-like spin current. Although spin-dependent…
We propose a model to explore the dynamics of spin-systems coupled by exchange interaction to the conduction band electrons of a semiconductor material that forms the channel in a ferromagnet/semiconductor/ferromagnet spin-valve structure.…
A scheme for a spin polarization direction switch is investigated by studying the spin-dependent electron transport of an asymmetrical quantum wire (QW) with Rashba spin-orbit coupling (SOC). It is found that the magnitude of the…
We demonstrate that non-equilibrium electrons in thin nonmagnetic semiconductor layers or quantum dots can be fully spin polarized by means of simultaneous electrical spin injection and extraction. The complete spin polarization is achieved…
We demonstrate electrical electron spin injection via interband tunneling in ferromagnetic/nonmagnetic semiconductor Esaki diodes. An interband tunnel junction between ferromagnetic p+-(Ga,Mn)As and nonmagnetic n+-GaAs under reverse-bias…
It has been predicted recently that an electron beam can be polarized when it flows adiabatically through a quantum point contact in a system with spin-orbit interaction. Here, we show that a simple transverse electron focusing setup can be…
A theory for the relation between the spin polarization and luminescence in silicon is presented. The theory provides intuitive relations for phonon-assisted optical transitions between the conduction and valence band edges. It is shown…
A magnetic-field-effect transistor is proposed that generates a spin-polarized current and exhibits a giant negative magnetoresitance. The device consists of a nonmagnetic conducting channel (wire or strip) wrapped, or sandwiched, by a…