Related papers: A spin-cell for spin current
Spintronics has emerged as a revolutionary frontier in the pursuit of faster, more energy-efficient, and technologically advanced electronics.
We present a proposal for a fully electrically controllable quantum dot based spin current injector. The device consists of a quantum dot that is strongly coupled to a ferromagnetic electrode on one side and weakly coupled to a nonmagnetic…
Had magnetic monopoles been ubiquitous as electrons are, we would probably have had a different form of matter, and power plants based on currents of these magnetic charges would have been a familiar scene of modern technology. Magnetic…
We demonstrate that information can be transmitted and processed with pure spin currents in silicon. Fe/Al2O3 tunnel barrier contacts are used to produce significant electron spin polarization in the silicon, generating a spin current which…
Topological insulators are candidates to open up a novel route in spin based electronics. Different to traditional ferromagnetic materials, where the carrier spin-polarization and magnetization are based on the exchange interaction, the…
It is shown that the flow of electric current in an altermagnet results in the formation of a homogeneous electron spin orientation in the sample. The spin of the conduction electrons generated in altermagnets with $d$-wave spin-momentum…
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…
By applying density functional theory calculations, we predict that the groundstate of bilayer silicene at certain interlayer distances can be antiferromagnetic. At small electron or hole doping, it becomes half metallic under applied…
Interaction between local magnetization and conduction electrons is responsible for a variety of phenomena in magnetic materials. It has been recently shown that spin current and associated electric voltage can be induced by magnetization…
Semiconductor point contacts can be a useful tool for producing spin-polarized currents in the presence of spin-orbit (SO) interaction. Neither magnetic fields nor magnetic materials are required. By numerical studies, we show that (i) the…
Pure spin currents, i.e. the transport of angular momentum without an accompanying charge current, represent a new, promising avenue in modern spintronics from both a fundamental and an application point of view. Such pure spin currents can…
Spin-transport in superconductors is a subject of fundamental and technical importance with the potential for applications in superconducting-based cryogenic memory and logic. Research in this area is rapidly intensifying with recent…
We investigate theoretically the prospects for using a magnetic nanoelectromechanical single-electron tunneling (NEM-SET) device as an electronic spin filter. We find that strong magnetic exchange forces on the net spin of the mobile…
We study an electrically controlled quantum spin Hall antidot embedded in a two-dimensional topological insulating bar. Helical edge states around the antidot and along the edges of the bar are tunnel coupled. The close connection between…
A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni80Fe20 results in spin accumulation at the…
This article aims at giving a general presentation of spintronics, an important field of research developing today along many new directions in physics of condensed matter. We tried to present simply the physical phenomena involved in…
Spin effects in a normal two-dimensional (2D) electron gas in lateral contact with a 2D region with spin-orbit interaction are studied. The peculiarity of this system is the presence of spin-dependent scattering of electrons from the…
Recent experimental breakthroughs have demonstrated that the electron spin in silicon can be reliably injected and detected as well as transferred over distances exceeding 1 mm. We propose an on-chip communication paradigm which is based on…
By generalizing the usual current density to a matrix with respect to spin variables, a general equation of continuity satisfied by the density matrix and current density matrix has been derived. This equation holds in arbitrary spin-orbit…
A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure-drain current in a spin valve by the magnetization of a third electrode,…