A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni80Fe20 results in spin accumulation at the Ni80Fe20/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature.
@article{arxiv.1107.0376,
title = {Spin-pumping-induced spin transport in p-type Si at room temperature},
author = {Eiji Shikoh and Kazuya Ando and Eiji Saito and Kazuki Kubo and Teruya Shinjo and Masashi Shiraishi},
journal= {arXiv preprint arXiv:1107.0376},
year = {2013}
}
Comments
23pages, 5 figures (To appear in Phys. Rev. Lett.)