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Dynamical Spin Injection into p-type Germanium at Room Temperature

Materials Science 2015-06-12 v3

Abstract

We demonstrate dynamical spin injection into p-type germanium (Ge) at room temperature (RT) using spin pumping. The generated pure spin current is converted to a charge current by the inverse spin-Hall effect (ISHE) arising in the p-type Ge sample. A clear electromotive force due to the ISHE is detected at RT. The spin-Hall angle for p-type Ge is estimated to be {\theta}SHE = 2.6x10-3 at RT, which is much larger than that for p-type Si.

Keywords

Cite

@article{arxiv.1212.3089,
  title  = {Dynamical Spin Injection into p-type Germanium at Room Temperature},
  author = {Mariko Koike and Eiji Shikoh and Yuichiro Ando and Teruya Shinjo and Shinya Yamada and Kohei Hamaya and Masashi Shiraishi},
  journal= {arXiv preprint arXiv:1212.3089},
  year   = {2015}
}

Comments

14 Pages, 3 Figures, 1 Table (To appear in Applied Physics Express)

R2 v1 2026-06-21T22:53:48.632Z