Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium

S. Iba; H. Saito; A. Spiesser; S. Watanabe; R. Jansen; S. Yuasa; K. Ando

doi:10.1143/APEX.5.023003

Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium

Mesoscale and Nanoscale Physics 2012-03-20 v1

Authors: S. Iba , H. Saito , A. Spiesser , S. Watanabe , R. Jansen , S. Yuasa , K. Ando

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Abstract

Spin accumulation induced in p-type germanium from Fe/MgO tunnel contacts is studied as a function of hole concentration p (10^16 - 10^19 cm-3). For all p, the contacts are free of rectification and Schottky barrier, guaranteeing spin injection into the Ge and preventing spin accumulation enhancement by two-step tunneling via interface states. The observed spin accumulation is smallest for nondegenerate doping (p ~ 10^16 cm-3) and increases for heavily doped Ge. This trend is opposite to what is expected from spin injection and diffusion theory. For heavily doped Ge, the observed spin accumulation is orders of magnitude larger than predicted.

Keywords

spin accumulation p-type germanium Fe/MgO tunnel contacts hole concentration spin injection heavy doping nondegenerate doping

Cite

@article{arxiv.1201.5552,
  title  = {Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium},
  author = {S. Iba and H. Saito and A. Spiesser and S. Watanabe and R. Jansen and S. Yuasa and K. Ando},
  journal= {arXiv preprint arXiv:1201.5552},
  year   = {2012}
}

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To appear in Appl. Phys. Express

Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium

Abstract

Keywords

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