We report the first experimental demonstration of electrical spin injection, transport and detection in bulk germanium (Ge). The non-local magnetoresistance in n-type Ge is observable up to 225K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge. The bias dependence of the nonlocal magnetoresistance and the spin lifetime in n-type Ge is also investigated.
@article{arxiv.1103.5095,
title = {Electrical spin injection and transport in Germanium},
author = {Yi Zhou and Wei Han and Li-Te Chang and Faxian Xiu and Minsheng Wang and Michael Oehme and Inga A. Fischer and Joerg Schulze and Roland. K. Kawakami and Kang L. Wang},
journal= {arXiv preprint arXiv:1103.5095},
year = {2015}
}