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Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots.…

Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has…

Practical quantum computers require the construction of a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a…

Mesoscale and Nanoscale Physics · Physics 2017-09-08 Guilherme Tosi , Fahd A. Mohiyaddin , Vivien Schmitt , Stefanie Tenberg , Rajib Rahman , Gerhard Klimeck , Andrea Morello

We report fabrication of transistors in a FinFET geometry using isotopically purified silicon-28 -on-insulator (28-SOI) substrates. Donor electron spin coherence in natural silicon is limited by spectral diffusion due to the residual…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 CC Lo , A Persaud , S Dhuey , D Olynick , F Borondics , MC Martin , HA Bechtel , J Bokor , T Schenkel

We describe critical processing issues in our development of single atom devices for solid-state quantum information processing. Integration of single 31P atoms with control gates and single electron transistor (SET) readout structures is…

Condensed Matter · Physics 2010-06-04 S. -J. Park , A. Persaud , J. A. Liddle , J. Nilsson , J. Bokor , D. H. Schneider , I. Rangelow , T. Schenkel

Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which…

An architecture for a quantum computer is presented in which spins associated with donors in silicon function as qubits. Quantum operations on the spins are performed using a combination of voltages applied to gates adjacent to the spins…

Quantum Physics · Physics 2015-06-26 B. E. Kane

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be…

Mesoscale and Nanoscale Physics · Physics 2016-12-21 R. Maurand , X. Jehl , D. Kotekar Patil , A. Corna , H. Bohuslavskyi , R. Laviéville , L. Hutin , S. Barraud , M. Vinet , M. Sanquer , S. De Franceschi

Donor spin qubits in silicon offer one- and two-qubit gates with fidelities beyond 99%, coherence times exceeding 30 seconds, and compatibility with industrial manufacturing methods. This motivates the development of large-scale quantum…

This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon's 200 mm production line within a restricted thermal…

Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31-P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using…

Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single 31P atom in silicon, using a…

Three-qubit quantum gates are key ingredients for quantum error correction and quantum information processing. We generate quantum-control procedures to design three types of three-qubit gates, namely Toffoli, Controlled-Not-Not and Fredkin…

Quantum Physics · Physics 2016-11-17 Ehsan Zahedinejad , Joydip Ghosh , Barry C. Sanders

We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of…

Mesoscale and Nanoscale Physics · Physics 2019-12-23 L. Hutin , R. Maurand , D. Kotekar-Patil , A. Corna , H. Bohuslavskyi , X. Jehl , S. Barraud , S. De Franceschi , M. Sanquer , M. Vinet

We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…

We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm apart,…

Future quantum computers capable of solving relevant problems will require a large number of qubits that can be operated reliably. However, the requirements of having a large qubit count and operating with high-fidelity are typically…

We suggest a new method of quantum information processing based on the precise placing of P-31 isotope atoms in a quasi-one-dimensional Si-28 nanowire using isotope engineering and neutron-transmutation doping of the grown structures. In…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 Issai Shlimak , Israel Vagner

We show how to measure and manipulate a single spin in a CMOS device fabricated in a pre-industrial 300 mm CMOS foundry. The device can be used as a spin quantum bit working at very low temperature. The spin manipulation is done by a…

Mesoscale and Nanoscale Physics · Physics 2019-12-20 R. Maurand , D. Kotekar-Patil , A. Corna , H. Bohuslavskyi , A. Crippa , R. Laviéville , L. Hutin , S. Barraud , M. Vinet , S. De Franceschi , X. Jehl , M. Sanquer
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