Related papers: Spin Injection: Interface Resistance in Fe/Semicon…
Spin injection from a half-metallic electrode in the presence of thermal spin disorder is analyzed using a combination of random matrix theory, spin-diffusion theory, and explicit simulations for the tight-binding s-d model. It is shown…
Current induced spin-orbit magnetic fields (iSOFs), arising either in single-crystalline ferromagnets with broken inversion symmetry1,2 or in non-magnetic metal/ferromagnetic metal bilayers3,4, can produce spin-orbit torques which act on a…
Spin injection in high-quality epitaxial Mn5Ge3 Schottky contacts on n-type Ge has been investigated using a three-terminal Hanle effect measurement. Clear Hanle and inverted Hanle signals with features characteristic of spin accumulation…
We propose a spin-dependent resonant tunneling structure to efficiently inject spin-polarized current into silicon (Si). By means of a heavily doped polycrystalline Si (Poly-Si) between the ferromagnetic metal (FM) and Si to reduce the…
Current-perpendicular-to-plane magnetoresistance (CPP-MR) measurements let us quantify conduction electron scattering and spin-flipping at a sputtered ferromagnetic/ferromagnetic (F1/F2 = Co/Ni) interface, with important consequences for…
The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…
We present measurements of thermal and electrical spin injection in nanoscale metallic non-local spin valve (NLSV) structures. Informed by measurements of the Seebeck coefficient and thermal conductivity of representative films made using a…
We have studied the electronic structure of the interface between 6H-SiC{0001} and graphite. On n-type and p-type 6H-SiC(0001) we observe Schottky barriers of Phi_b,n^Si= 0.3+-0.1eV and Phi_b,p^Si=2.7+-0.1eV, respectively. The observed…
We study the spin dependent tunneling of electrons through a zinc-blende semiconductor with the indirect X (or D) minimum serving as the tunneling barrier. The basic difference between tunneling through the G vs. the X barrier is the…
We have observed temperature-dependent reversal of the rectifying polarity in Au/Nb:SrTiO3 Schottky junctions. By simulating current-voltage characteristics we have found that the permittivity of SrTiO3 near the interface exhibits…
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the…
Energy dispersion and spin orientation of the protected states at interfaces between topological insulators (TIs) and non-topological materials depend on the charge redistribution, strain, and atomic displacement at the interface. Knowledge…
The electrical contact to two-dimensional (2D)-semiconductor materials are decisive to the electronic performance of 2D-semiconductor field-effect devices (FEDs). The presence of a Schottky barrier often leads to a large contact resistance,…
With nearly complete spin polarization, the ferromagnetic semiconductor europium monoxide could enable next-generation spintronic devices by providing efficient ohmic spin injection into silicon. Spin injection is greatly affected by the…
We have probed the interface of a ferromagnetic/semiconductor (FM/SC) heterojunction by a combined high resolution photoemission spectroscopy and x-ray photoelectron diffraction study. Fe/ZnSe(001) is considered as an example of a very low…
Heterostructures combining topological and non-topological materials constitute the next frontier in the effort to incorporate topological insulators (TIs) into functional electronic devices. We show that the properties of the interface…
Ferroelectric polar displacements have recently been observed in conducting electron-doped BaTiO3. The co-existence of a ferroelectric phase and conductivity opens the door to new functionalities which may provide a unique route for novel…
We examine the effect of a spin-active interface on the symmetry of proximity-induced superconducting pairing amplitudes in topological insulators. We develop a model to investigate the leading order contribution to the pairing amplitude…
We present ab-initio local density FLAPW calculations on non-reactive N-terminated [001] ordered GaN/Ag and GaN/Au interfaces and compare the results (such as metal induced gap states and Schottky barrier heights) with those obtained for…
A comparison is made between the degree of spin polarization of electrons excited by one- and two-photon absorption of circularly polarized light in bulk zincblende semiconductors. Time- and polarization-resolved experiments in…