We have studied the electronic structure of the interface between 6H-SiC{0001} and graphite. On n-type and p-type 6H-SiC(0001) we observe Schottky barriers of Phi_b,n^Si= 0.3+-0.1eV and Phi_b,p^Si=2.7+-0.1eV, respectively. The observed barrier is face specific: on n-type 6H-SiC(000-1) we find Phi_b,n^C=1.3+-0.1eV. The impact of these barriers on the electrical properties of metal/SiC contacts is discussed.
Cite
@article{arxiv.cond-mat/0610220,
title = {Electronic structure of graphite/6H-SiC interfaces},
author = {Th. Seyller and K. V. Emtsev and F. Speck and K. -Y. Gao and L. Ley},
journal= {arXiv preprint arXiv:cond-mat/0610220},
year = {2007}
}
Comments
6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006, Newcastle upon Tyne, UK, September 3rd - 7th, 2006. Revised version. Proceeding will appear in Materials Science Forum