The interface structure of epitaxial graphene grown on 4H-SiC(0001)

J. Hass; J. E. Millan-Otoya; P. N. First; E. H. Conrad

doi:10.1103/PhysRevB.78.205424

The interface structure of epitaxial graphene grown on 4H-SiC(0001)

Materials Science 2009-11-13 v1

Authors: J. Hass , J. E. Millan-Otoya , P. N. First , E. H. Conrad

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Abstract

We present a structural analysis of the graphene-4HSiC(0001) interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two SiC bilayers. The interface directly below the first graphene sheet is an extended layer that is more than twice the thickness of a bulk SiC bilayer (~1.7A compared to 0.63A). The distance from this interface layer to the first graphene sheet is much smaller than the graphite interlayer spacing but larger than the same distance measured for graphene grown on the (000-1) surface, as predicted previously by ab intio calculations.

Keywords

epitaxial graphene 4H-SiC(0001) interface structure surface x-ray reflectivity reconstruction SiC bilayer

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@article{arxiv.0808.1413,
  title  = {The interface structure of epitaxial graphene grown on 4H-SiC(0001)},
  author = {J. Hass and J. E. Millan-Otoya and P. N. First and E. H. Conrad},
  journal= {arXiv preprint arXiv:0808.1413},
  year   = {2009}
}

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The interface structure of epitaxial graphene grown on 4H-SiC(0001)

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