English

Ab initio Study of Graphene on SiC

Materials Science 2009-11-13 v2

Abstract

Employing density-functional calculations we study single and double graphene layers on Si- and C-terminated 1x1-6H-SiC surfaces. We show that, in contrast to earlier assumptions, the first carbon layer is covalently bonded to the substrate, and cannot be responsible for the graphene-type electronic spectrum observed experimentally. The characteristic spectrum of free-standing graphene appears with the second carbon layer, which exhibits a weak van der Waals bonding to the underlying structure. For Si-terminated substrate, the interface is metallic, whereas on C-face it is semiconducting or semimetallic for single or double graphene coverage, respectively.

Keywords

Cite

@article{arxiv.0704.0216,
  title  = {Ab initio Study of Graphene on SiC},
  author = {Alexander Mattausch and Oleg Pankratov},
  journal= {arXiv preprint arXiv:0704.0216},
  year   = {2009}
}

Comments

4 pages, 3 figures, 1 table; Submitted to Physical Review Letters on 01/08/07