Decoupling Graphene from SiC(0001) via Oxidation

S. Oida; F. R. McFeely; J. B. Hannon; R. M. Tromp; M. Copel; Z. Chen; Y. Sun; D. B. Farmer; J. Yurkas

doi:10.1103/PhysRevB.82.041411

Decoupling Graphene from SiC(0001) via Oxidation

Materials Science 2015-05-18 v1

Authors: S. Oida , F. R. McFeely , J. B. Hannon , R. M. Tromp , M. Copel , Z. Chen , Y. Sun , D. B. Farmer , J. Yurkas

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Abstract

When epitaxial graphene layers are formed on SiC(0001), the first carbon layer (known as the "buffer layer"), while relatively easy to synthesize, does not have the desirable electrical properties of graphene. The conductivity is poor due to a disruption of the graphene pi-bands by covalent bonding to the SiC substrate. Here we show that it is possible to restore the graphene pi-bands by inserting a thin oxide layer between the buffer layer and SiC substrate using a low temperature, CMOS-compatible process that does not damage the graphene layer.

Keywords

epitaxial graphene graphene

Cite

@article{arxiv.1003.5702,
  title  = {Decoupling Graphene from SiC(0001) via Oxidation},
  author = {S. Oida and F. R. McFeely and J. B. Hannon and R. M. Tromp and M. Copel and Z. Chen and Y. Sun and D. B. Farmer and J. Yurkas},
  journal= {arXiv preprint arXiv:1003.5702},
  year   = {2015}
}

Decoupling Graphene from SiC(0001) via Oxidation

Abstract

Keywords

Cite

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