A recipe on how to engineer a band gap in the energy spectrum for the carriers in graphene is conveyed. It is supported by a series of numerical simulations inspired by an analytical result based on the opening of a band gap in periodically corrugated graphene, e.g. the buffer layer grown on SiC at high temperatures.
@article{arxiv.1810.01918,
title = {Band Gap Modulation of Graphene on SiC},
author = {Stefan Kolev and Victor Atanasov and Hristiyan Aleksandrov and Teodor Milenov},
journal= {arXiv preprint arXiv:1810.01918},
year = {2018}
}