Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the width W of the wall between the neighboring holes is even. The size of the band gap increases with the reduced W and has a simple relation with the ratio of the removed Si atom and the total Si atom numbers of silicene. Quantum transport simulation reveals that the sub-10 nm single-gated SNM field effect transistors show excellent performance at zero temperature but such a performance is greatly degraded at room temperature.
@article{arxiv.1501.01911,
title = {Silicene Nanomesh},
author = {Feng Pan and Yangyang Wang and Kaili Jiang and Zeyuan Ni and Jianhua Ma and Jiaxin Zheng and Ruge Quhe and Junjie Shi and Jinbo Yang and Changle Chen and Jing Lu},
journal= {arXiv preprint arXiv:1501.01911},
year = {2015}
}