We present electronic structure calculations of few-layer epitaxial graphene nanoribbons on SiC(0001). Trough an atomistic description of the graphene layers and the substrate within the extended H\"{u}ckel Theory and real/momentum space projections we argue that the role of the heterostructure's interface becomes crucial for the conducting capacity of the studied systems. The key issue arising from this interaction is a Fermi level pinning effect introduced by dangling interface bonds. Such phenomenon is independent from the width of the considered nanostructures, compromising the importance of confinement in these systems.
@article{arxiv.0908.2554,
title = {Electronic structure of epitaxial graphene nanoribbons on SiC(0001)},
author = {I. Deretzis and A. La Magna},
journal= {arXiv preprint arXiv:0908.2554},
year = {2009}
}