Related papers: Spin Injection: Interface Resistance in Fe/Semicon…
In a recent Letter Hammar et al. claim the observation of injection of a spin-polarized current in a two-dimensional electron gas (2DEG). This is an important observation, since, despite considerable effort of several groups, all attempts…
We present a combined experimental and theoretical work that investigates the magnetic proximity effect at a ferromagnetic-insulator - superconductor (FI-S) interface. The simulation is based on the boundary condition for diffusive…
Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ~…
The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make…
Based on the spin-pumping theory and first-principles calculations, the spin-mixing conductance (SMC) is theoretically studied for Pt/Permalloy (Ni$_{81}$Fe$_{19}$, Py) junctions. We evaluate the SMC for ideally clean Pt/Py junctions and…
Spontaneous spin polarization of the electrical current flowing through nonmagnetic semiconductor junctions can be generated by carrier scattering processes that are independent of the carrier spin. The two required elements for…
Theory of the ac spin injection from a ferromagnetic electrode into a normal conductor through a tunnel or Schottky contact is developed. Diffusion and relaxation of non-equilibrium spins results in a frequency dependent complex impedance…
An inherent difficulty in studying mesoscopic effects in semiconductor--superconductor hybrid structures is the large Schottky barrier which often forms at the interface. A large technological effort has been invested in in improving the…
The structure and dynamical properties of the Fe$_3$Si/GaAs(001) interface are investigated by density functional theory and nuclear inelastic scattering measurements. The stability of four different atomic configurations of the…
We simulate the electron transport across the Au(111)-pentacene interface using non-equilibrium Green's functions and density-functional theory (NEGF-DFT), and calculate the bias-dependent electron transmission. We find that the electrical…
The Schottky barrier of a metal-semiconductor junction is one of the key quantities affecting the charge transport in a transistor. The Schottky barrier height depends on several factors, such as work function difference, local atomic…
Opposite to the common idea of a magnetic order requirement to obtain spin current propagation, materials with no magnetic ordering have also been revealed to be efficient spin conductors. In this work, we investigate the spin current…
Ferroelectric memristors have attracted much attention as a type of nonvolatile resistance switching memories in neuromorphic computing, image recognition, and information storage. Their resistance switching mechanisms have been studied…
We demonstrate spin polarized tunneling from Fe through a SiO2 tunnel barrier into a Si n-i-p heterostructure. Transport measurements indicate that single step tunneling is the dominant transport mechanism. The circular polarization, Pcirc,…
1 Introduction 2 Simple model of spin injection 3 Spin-polarized transport: concepts and definitions 4 The standard model of spin injection: F/N junction 5 Nonequilibrium resistance and spin bottleneck 6 Transparent and tunnel contacts,…
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a…
Tunnel spin polarization in a piezoelectric AlGaN/GaN double barrier structure is calculated. It is shown that the piezoelectric field and the spontaneous electrical polarization increase an efficiency of the tunnel spin injection. The…
We demonstrated that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (<= 2 nm) in Fe/Mg/MgO/n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we…
We propose to use the lateral interface between two regions with different strengths of the spin-orbit interaction(s) to spin-polarize the electrons in gated two dimensional semiconductor heterostructures. For a beam with a non zero angle…
We have studied the finite bias transport properties of a 2H-1T' MoS$_2$ lateral metal-semiconductor (M-S) junction by non-equilibrium Green's functions calculations, aimed at contacting the 2D channel in a field effect transistor. Our…