Related papers: Analysis of integrated single-electron memory oper…
We present a microscopic theory of single-electron tunneling through metallic nanoparticles connected to the electrodes through molecular bridges. It combines the theory of electron transport through molecular junctions with the description…
A peculiarity of the single-electron transistor effect makes it possible to observe this effect even in structures lacking a gate electrode altogether. The proposed method can be useful for experimental study of charging effects in…
Synaptic memory consolidation has been heralded as one of the key mechanisms for supporting continual learning in neuromorphic Artificial Intelligence (AI) systems. Here we report that a Fowler-Nordheim (FN) quantum-tunneling device can…
Tunneling of single electrons has been thoroughly studied both theoretically and experimentally during last ten years. By the present time the basic physics is well understood, and creation of useful single-electron devices becomes the…
This paper presents the process optimization of a single-electron nanoflash electron memory. Self-aligned single dot memory structures have been fabricated using a wet anisotropic oxidation of a silicon nanowire. One of the main issue was…
Using numerical modeling we study emergence of structure and structure-related nonlinear conduction properties in the self-assembled nanoparticle films. Particularly, we show how different nanoparticle networks emerge within assembly…
This work is focused on the understanding of charging and discharging processes in silicon nanocrystal flash memories during program and erase operations through time-dependent numerical simulations. Time dependent simulations of the…
Quantum fluctuations of the charge in the single electron box are investigated. Based on a diagrammatic expansion we calculate the average island charge number and the effective charging energy in third order in the tunneling conductance.…
We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but…
A single-electron random access memory array (RAM) and a single-electron universal Fredkin gate are designed and simulated. The universality of the Fredkin gate in combination with the RAM gives the potential of the realization of an…
We investigate experimentally the transport properties of single-walled carbon nanotube bundles as a function of temperature and applied current over broad intervals of these variables. The analysis is performed on arrays of nanotube…
Over the past decades, the relentless scaling and mass production of flash memory have underpinned the data-centric era. Yet charge-trap-based 3D NAND flash is now constrained by intrinsic physical and architectural limits, including…
Flash memory based on floating gate transistor is the most widely used memory technology in modern microelectronic applications. We recently proposed a new concept of multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT) based…
The generalized Floquet approach is developed to study memory effect on electron transport phenomena through a periodically driven single quantum dot in an electrode-multi-level dot-electrode nanoscale quantum device. The memory effect is…
We describe single electron tunneling through molecular structures under the influence of nano-mechanical excitations. We develop a full quantum mechanical model, which includes charging effects and dissipation, and apply it to the…
We study single-electron tunneling (SET) characteristics in crystalline PbS/InP junctions, that exhibit single-electron Coulomb-blockade staircases along with memory and memory-fading behaviors. This gives rise to both short-term and…
We have carried out a coordinated experimental and theoretical study of single-electron traps based on submicron aluminum islands and aluminum oxide tunnel junctions. The results of geometrical modeling using a modified version of MIT's…
We perform a numerical analysis of recently proposed scaling functions for the single electron box. Specifically, we study the ``magnetic'' susceptibility as a function of tunneling conductance and gate charge, and the effective charging…
Background charge rearrangements in metallic single-electron transistors are modelled in two-level tunnelling systems as a Poisson process with a scale parameter as only variable. The model explains the recent observation of asymmetric…
A possibility to perform single-electron computing without dissipation in the array of tunnel-coupled quantum dots is studied theoretically, taking the spin gate NOT (inverter) as an example. It is shown that the logical operation can be…