Related papers: Analysis of integrated single-electron memory oper…
In this paper I study the posibility of inducing a single-electron current by rotating a non-magnetic conducting rod with a small tunnel junction immerse in a uniform magnetic field perpendicular to the plane of motion. I show first, by…
Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room…
Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined…
We report the investigation of a single quantum dot charge storage device. The device allows selective optical charging of a single dot with electrons, storage of these charges over timescales much longer than microseconds and reliable…
We present a first-principles method for calculating the charging energy of a molecular single-electron transistor operating in the Coulomb blockade regime. The properties of the molecule are modeled using density-functional theory, the…
A coding scheme is introduced, allowing to store a set of linked bit strings in planar magnetic nanoelements with holes. Analytical expressions for the corresponding magnetization distributions are developed up to a homotopy and the…
Electron tunneling in ferromagnetic single-electron transistors is considered theoretically in the sequential tunneling regime. A new formalism is developed, which operates in a two-dimensional space of states, instead of one-dimensiona…
We investigate the interplay of ferroelectricity and quantum electron transport at the nanoscale in the regime of Coulomb blockade. Ferroelectric polarization in this case is no longer the external parameter but should be self-consistently…
We present an in-depth analysis of a single-electron box (SEB) biased through a floating node technique that is common in charge-coupled devices (CCDs). The device is analyzed and characterized in the context of single-electron…
We present a theory of single-electron tunneling transport through a ferromagnetic nanoparticle in which particle-hole excitations are coupled to spin collective modes. The model employed to describe the interaction between quasiparticles…
We present numerical results on electron tunneling in a single-electron box at low temperature. The effective action of this device is equivalent to the Hamiltonian of a classical XY spin chain with long ranged interactions. Using an…
The read channel in Flash memory systems degrades over time because the Fowler-Nordheim tunneling used to apply charge to the floating gate eventually compromises the integrity of the cell because of tunnel oxide degradation. While…
Controlling electrons at the level of elementary charge $e$ has been demonstrated experimentally already in the 1980's. Ever since, producing an electrical current $ef$, or its integer multiple, at a drive frequency $f$ has been in a focus…
The co-location of memory and processing is a core principle of neuromorphic computing. A local memory device for synaptic weight storage has long been recognized as an enabling element for large-scale, high-performance neuromorphic…
Usual paradigm in the theory of electron transport is related to the fact that the dielectric permittivity of the insulator is assumed to be constant, no time dispersion. We take into account the "slow" polarization dynamics of the…
Solid-state storage architectures based on NAND or emerging memory devices (SSD), are fundamentally architected and optimized for both reliability and performance. Achieving these simultaneous goals requires co-design of memory components…
We derive self-consistent expressions of current and noise for single-electron transistors driven by time-dependent perturbations. We take into account effects of the electrical environment, higher-order co-tunneling, and time-dependent…
We report a novel field-sensitive tunneling barrier by embedding C60 in SiO2 for nonvolatile memory applications. C60 is a better choice than ultra-small nanocrystals due to its monodispersion. Moreover, C60 provides accessible energy…
In this Letter, we present a theoretical analysis to single-electron pumping operation in a large range of driving frequencies through the time-dependent tunneling barriers controlled by external gate voltages. We show that the…
A single-electron latch is a device that can be used as a building block for Quantum-dot Cellular Automata (QCA) circuits. It consists of three nanoscale metal "dots" connected in series by tunnel junctions; charging of the dots is…