Single-Electron Traps: A Quantitative Comparison of Theory and Experiment
Condensed Matter
2009-10-28 v1
Abstract
We have carried out a coordinated experimental and theoretical study of single-electron traps based on submicron aluminum islands and aluminum oxide tunnel junctions. The results of geometrical modeling using a modified version of MIT's FastCap were used as input data for the general-purpose single-electron circuit simulator MOSES. The analysis indicates reasonable quantitative agreement between theory and experiment for those trap characteristics which are not affected by random offset charges. The observed differences between theory and experiment (ranging from a few to fifty percent) can be readily explained by the uncertainty in the exact geometry of the experimental nanostructures.
Cite
@article{arxiv.cond-mat/9609273,
title = {Single-Electron Traps: A Quantitative Comparison of Theory and Experiment},
author = {K. A. Matsuoka and K. K. Likharev and P. Dresselhaus and L. Ji and S. Han and J. Lukens},
journal= {arXiv preprint arXiv:cond-mat/9609273},
year = {2009}
}
Comments
17 pages, 21 figures, RevTex, epsf