Related papers: Spin-injection through an Fe/InAs Interface
We use a fully relativistic layer Green's functions approach to investigate spin-dependent tunneling through a symmetric indirect band gap barrier like GaAs/AlAs/GaAs heterostructure along [100] direction. The method is based on Linear…
We present experimental observations of the interference of spin-wave modes propagating in opposite directions in micron-sized NiFe-waveguides. To monitor the local spin-wave intensity distribution and phase of the formed interference…
We report transport studies of hybrid Josephson junctions based on semiconducting InAs nanowires with fully overlapping epitaxial ferromagnetic insulator EuS and superconducting Al partial shells. Current-biased measurements reveal a…
We calculate the density of states (DOS) in a diffusive superconducting/ferromagnetic bilayer with a spin-active interface. We use a self-consistent numerical treatment to make a systematic study of the effects of the Spin-Dependence of…
We discuss a three-dimensional (3D) spin drift diffusion (SDD) model to inject spin from a ferromagnet (FM) to a normal metal (N) or semiconductor (SC). Using this model we investigate the problem of spin injection into isotropic materials…
In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the…
We study spin-dependent interband resonant tunneling in double-barrier InAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can be used as spin filters utilizing spin-selective tunneling of electrons through the…
Motivated by recent experiments in trapped Fermi gas with spin population imbalance, we discuss the effects of the quantum and thermal fluctuations of the interface between a fully paired superfluid core and a fully polarized Fermi gas. We…
Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of…
Spin-orbital textures in topological insulators due to the spin locking with the electron momentum, play an important role in spintronic phenomena that arise from the interplay between charge and spin degrees of freedom. We have explored…
The exchange interaction determines the ferromagnetic (FM) or antiferromagnetic (AFM) ordering of atomic spins. When ferromagnets and antiferromagnets are coupled together, they often exhibit the exchange bias effect, a unidirectional…
Interfaces between heavy metals (HMs) and antiferromagnetic insulators (AFIs) have recently become highly investigated and debated systems in the effort to create spintronic devices able to function at terahertz frequencies. Such…
We considered the nonequlibrium spin dipoles induced around spin independent elastic scatterers by the intrinsic spin-Hall effect associated with the Rashba spin-orbit coupling. The normal to 2DEG spin polarization has been calculated in…
Physics-informed neural networks (PINNs) have emerged as a flexible framework for solving partial differential equations, but their performance on interface problems remains challenging because continuity and flux conditions are typically…
Spin-dependent tunneling through an indirect bandgap barrier like the GaAs/AlAs/GaAs heterostructure along [001] direction is studied by the tight-binding method. The tunneling is characterized by the proportionality of the Dresselhaus…
We fabricated a hybrid structure in which cobalt and permalloy micromagnets produce a local in-plane spin-dependent potential barrier for high-mobility electrons at the GaAs/AlGaAs interface. Spin effects are observed in ballistic transport…
Quasi-particle interference (QPI) is a powerful tool to characterize the symmetry of the superconducting order parameter in unconventional superconductors, by mapping the spatial dependence of elastic tunneling of electrons between the tip…
Electrical injection of spin-polarized electrons into a semiconductor, large spin diffusion length, and an integration friendly platform are desirable ingredients for spin-based devices. Here we demonstrate lateral spin injection and…
We investigate the dependence of the inelastic spin excitation contribution to scanning tunneling spectroscopy recorded above Fe adsorbates on the InSb(110) surface at subkelvin temperatures, on bulk doping and tunnel junction resistance.…
The spin- and energy-dependent interface reflectivity of a ferromagnetic (FM) film in contact with a nonmagnetic (NM) film is calculated using a first-principles transport method and incorporated into the superdiffusive spin transport model…